一种用于能量采集系统的自偏置有源倍压器

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2017-12-03 DOI:10.1155/2017/1650161

U. Tayyab, H. Alzaher

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引用次数: 2

摘要

提出了一种用于能量采集系统的利用单电源运算放大器的有源倍压器。所提出的倍频器用于整流过程，以实现可接受的高功率转换效率（PCE）和大的整流直流电压。内置的运算放大器是自偏置的，这意味着不需要外部电源，而是使用部分采集的能量进行偏置。所提出的有源倍频器在200 Hz正弦输入0.8 V表示20 K负载电阻器。与无源倍压器相比，这种效率高出2倍。整流后的直流电压几乎是传统无源倍频器的2倍。文中还介绍了PCE与负载电阻之间的关系。所提出的有源倍压器在LF0.15中进行了设计和仿真 μm CMOS工艺技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Self-Biased Active Voltage Doubler for Energy Harvesting Systems

An active voltage doubler utilizing a single supply op-amp for energy harvesting system is presented. The proposed doubler is used for rectification process to achieve both acceptably high power conversion efficiency (PCE) and large rectified DC voltage. The incorporated op-amp is self-biased, meaning no external supply is needed but rather it uses part of the harvested energy for its biasing. The proposed active doubler achieves maximum power conversion efficiency (PCE) of 61.7% for a 200 Hz sinusoidal input of 0.8 V for a 20 K load resistor. This efficiency is 2 times more when compared with the passive voltage doubler. The rectified DC voltage is almost 2 times more than conventional passive doubler. The relation between PCE and the load resistor is also presented. The proposed active voltage doubler is designed and simulated in LF 0.15 μm CMOS process technology using Cadence virtuoso tool.

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.