分子fet器件电路建模与设计的VHDL-AMS仿真框架

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
M. Graziano, A. Zahir, M. A. Mehdy, G. Piccinini
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引用次数: 2

摘要

我们专注于分子场效应管器件,提出了一种新的基于VHDL-AMS的模块化框架。我们已经在框架内实现了不同的分子场效应管模型。该框架允许在计算精确特性的能力方面对模型进行比较。它还提供了分析分子场效应管的影响及其在电路中的实现的选项,并扩展了其在基于交叉条配置的架构中的使用。这一分析证明了工艺参数选择的影响,模型捕捉物理量影响的能力,以及在电路制造层面考虑缺陷的重要性。对比处理了不同模型和技术的计算工作量,并讨论了作为电路分析最终要求的函数的准确性和性能之间的权衡。我们使用三种不同的模型证明了这种方法,并在奔腾4中包含的16位树形加法器上进行了测试,据我们所知,这是迄今为止设计和分析的基于分子器件的最大电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
VHDL-AMS Simulation Framework for Molecular-FET Device-to-Circuit Modeling and Design
We concentrate on Molecular-FET as a device and present a new modular framework based on VHDL-AMS. We have implemented different Molecular-FET models within the framework. The framework allows comparison between the models in terms of the capability to calculate accurate - characteristics. It also provides the option to analyze the impact of Molecular-FET and its implementation in the circuit with the extension of its use in an architecture based on the crossbar configuration. This analysis evidences the effect of choices of technological parameters, the ability of models to capture the impact of physical quantities, and the importance of considering defects at circuit fabrication level. The comparison tackles the computational efforts of different models and techniques and discusses the trade-off between accuracy and performance as a function of the circuit analysis final requirements. We prove this methodology using three different models and test them on a 16-bit tree adder included in Pentium 4 that, to the best of our knowledge, is the biggest circuits based on molecular device ever designed and analyzed.
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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