Architecture Characteristics and Technical Trends of UHF RFID Temperature Sensor Chip

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2018-10-01 DOI:10.1155/2018/9343241

Guofeng Zhang, Dehua Wu, Jingdun Jia, W. Gao, Qiang Cai, Wan’ang Xiao, Lina Yu, Sha Tao, Qi Chu

引用次数: 7

Abstract

The integration of temperature sensor (TS) and UHF RFID technology has attracted wide attention theoretically and experimentally. The architecture, power consumption, temperature measurement range, accuracy, and communication distance are key indicators of the performance of UHF RFID temperature sensor chip (RID-TSC). This work aims to provide a clearer view of the development of UHF RFID-TSC integration technology. After a systematic analysis of the characteristics of ADC, TDC, and FDC used in an integrated TS, the key low-power technologies under different architectures are summarized. Through the observation of the latest researches and commercial products, the development trend of UHF RFID-TSC technology is obtained, including on-chip and off-chip coordination, multiprotocol and multifrequency support, passive wireless sensor intelligence, miniaturization, and concealment.

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超高频RFID温度传感器芯片的结构特点及技术趋势

温度传感器（TS）与超高频RFID技术的集成在理论和实验上都引起了广泛的关注。超高频RFID温度传感器芯片的结构、功耗、测温范围、精度和通信距离是衡量其性能的关键指标。这项工作旨在为UHF RFID-TSC集成技术的发展提供更清晰的视角。在系统分析了集成TS中使用的ADC、TDC和FDC的特性后，总结了不同架构下的关键低功耗技术。通过对最新研究和商业产品的观察，了解了UHF RFID-TSC技术的发展趋势，包括片上和片外协同、多协议和多频支持、无源无线传感器智能化、小型化和隐蔽化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.