基于单运维跨阻放大器的全相运维跨阻模式精密全波整流器设计

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Hung-Chun Chien
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引用次数: 7

摘要

本研究提出了两种全相操作跨电阻模式(TRM)全波精密整流器的设计。第一个电路由一个操作跨电阻放大器(OTRA)、四个二极管和一个电阻器组成。第二种方案是OTRA与基于全金属氧化物半导体场效应晶体管的设计相结合,由于电路拓扑中没有使用无源元件,因此更适合集成电路的实现。根据我们的文献综述,这是第一个讨论由单个OTRA和少量无源元件组成的全相操作跨电阻模式精密全波整流器的研究。在本文中,首先回顾了先前报道的几种由各种有源器件组成的精密全波整流器,然后提出了基于otra的跨电阻模式精密全波整流器,并分析了非理想效应。此外,计算机仿真和实验结果验证了所提出电路的有效性,与理论预测一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Full-Phase Operation Transresistance-Mode Precision Full-Wave Rectifier Designs Using Single Operational Transresistance Amplifier
This study proposed the designs of two full-phase operation transresistance-mode (TRM) precision full-wave rectifiers. The first circuit consisted of a single operational transresistance amplifier (OTRA), four diodes, and a resistor. The second scheme was an OTRA combined with a full metal-oxide semiconductor field-effect transistor-based design, which is preferable for integrated circuit implementation because no passive components are used in the circuit topology. Based on our literature review, this is the first study that discussed a full-phase operation transresistance-mode precision full-wave rectifier consisting of a single OTRA and few passive components. In this paper, several previously reported precision full-wave rectifiers consisting of various active devices are first reviewed followed by the proposed OTRA-based transresistance-mode precision full-wave rectifiers and an analysis of nonideal effects. Furthermore, computer simulations and experimental results are presented to verify the validity of the proposed circuits, which were consistent with the theoretical predictions.
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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