Analysis of Noise Characteristics of Multichannel Systems of the Formation of Signals of Georadars with Synthesized Aperture

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
O. Kuzichkin, D. I. Surzhik, G. S. Vasiliev, I. Kurilov, N. V. Dorofeev
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引用次数: 0

Abstract

The noise characteristics of multichannel systems of forming signals based on hybrid frequency synthesizers with automatic compensation of phase distortions of direct digital synthesizers, which are used in the composition of georadars with synthesized aperture, are investigated. It is established that the phase noise of the output signals of the formers at the 1 kHz detuning from the carrier oscillation at the output frequencies of the devices in the range from 500 to 3500 MHz is characterized by a level of minus 100 - minus 130 dB. In this case, the circuit of the signal former based on a hybrid frequency synthesizer with direct digital synthesizer as a reference oscillator of a phase locked loop is characterized by the worst noise characteristics but with the highest degree of autocompensation (about 13 dB). Conversely, the circuit of the signal former based on a hybrid frequency synthesizer with direct digital synthesizer as a support generator of the phase-locked loop has the best phase noises level from the considered variants of devices and least degree of autocompensation (about 6 dB).
合成孔径地质雷达信号形成多通道系统噪声特性分析
研究了用于合成孔径地质雷达合成的直接数字合成器相位畸变自动补偿混合频率合成器多通道信号形成系统的噪声特性。在500 ~ 3500mhz范围内的器件输出频率的载波振荡中,在1 kHz失谐处,发生器输出信号的相位噪声的特征为- 100 ~ - 130 dB。在这种情况下,基于直接数字合成器作为锁相环参考振荡器的混合频率合成器的信号发生器电路具有最差的噪声特性,但具有最高的自补偿程度(约13 dB)。相反,基于直接数字合成器作为锁相环支撑发生器的混合频率合成器的信号发生器电路在考虑的器件变体中具有最佳的相位噪声水平和最小的自补偿程度(约6 dB)。
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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