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Devices with Te-doped InGaP layers 掺te InGaP层器件
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418544
R. Kúdela, D. Gregušová, R. Stoklas
{"title":"Devices with Te-doped InGaP layers","authors":"R. Kúdela, D. Gregušová, R. Stoklas","doi":"10.1109/ASDAM.2012.6418544","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418544","url":null,"abstract":"Highly n-type doped and several nanometres thick layers are necessary for various device structures, especially HEMTs. We studied delta doping In<sub>1-X</sub>Ga<sub>X</sub>P ternary with tellurium, the layers were grown by MOVPE. A low growth temperature of 560 °C was used to restrict the influence of diffusion, and diethyltellurium was used as the precursor. A maximum Hall sheet concentration of 2.75×10<sup>13</sup> cm<sup>-2</sup> was achieved. Very thin HEMT structures with high conductivity and HEMTs were prepared using the In<sub>1-X</sub>Ga<sub>X</sub>P barriers doped with tellurium.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126313120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaAs nanowhiskers for femtosecond photodetectors and THz emitters 飞秒光电探测器和太赫兹发射器用砷化镓纳米晶须
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418553
M. Mikulics, J. Zhang, R. Sobolewski, R. Adam, L. Juul, M. Marso, A. Winden, H. Hardtdegen, D. Grutzmacher, P. Kordos
{"title":"GaAs nanowhiskers for femtosecond photodetectors and THz emitters","authors":"M. Mikulics, J. Zhang, R. Sobolewski, R. Adam, L. Juul, M. Marso, A. Winden, H. Hardtdegen, D. Grutzmacher, P. Kordos","doi":"10.1109/ASDAM.2012.6418553","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418553","url":null,"abstract":"We have developed and characterized ultrafast and highly sensitive photodetectors based on GaAs nanowhiskers fabricated with an improved top-down etching method. We evaluated the material properties of the etched nanowhiskers by micro photoluminescence measurements and studied the effect of post annealing on nanowhiskers' luminescence. The nanowhiskers were integrated into the coplanar striplines for device testing using DC and time-resolved electro-optic characterization techniques. Our photodetectors exhibit a very low dark current below 500 pA at 10 V bias as well as a high responsivity of 0.19 A/W at 30 V, and a cut-off frequency of 1.3 THz. These characteristics make the GaAs nanowhisker photodetectors very promising candidates for high-speed optoelectronics and efficient THz emitters.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115824320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High temperature AlGaN/GaN HFET microwave characterization 高温AlGaN/GaN HFET微波表征
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418562
M. Tomáška
{"title":"High temperature AlGaN/GaN HFET microwave characterization","authors":"M. Tomáška","doi":"10.1109/ASDAM.2012.6418562","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418562","url":null,"abstract":"The paper reports high temperature on-wafer microwave characterization setup for AlGaN/GaN HEMT devices. DC output characteristics as well as microwave parameters fT and fmax were measured and visualized in the form of 3-D diagrams in the temperature range from room temperature up to 425°C. Significant influence of temperature on DC and microwave properties was observed.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115445806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of diffusion barriers for Ti/Al based ohmic contact to AlGaN/GaN heterostructures Ti/Al基与AlGaN/GaN异质结构欧姆接触扩散势垒的研究
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418532
W. Macherzyński, B. Paszkiewicz
{"title":"Development of diffusion barriers for Ti/Al based ohmic contact to AlGaN/GaN heterostructures","authors":"W. Macherzyński, B. Paszkiewicz","doi":"10.1109/ASDAM.2012.6418532","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418532","url":null,"abstract":"We tested various ohmic contact metallizations schemes on AlGaN/GaN heterostructures to achieve good surface topography and proper line edge definition. Ti, Ru, Pt and Mo barrier layers replaced the intermediate Ni layer in Ti/Al/Ni/Au multilayer metallization. We observed significant difference in proposed schemes topography and line edge definition. The Ti/Al/Mo/Au contact had not only good surface morphology but also proper line edge definition.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130376591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Strain accommodation within porous buffer layers in heteroepitaxial growth 异质外延生长中多孔缓冲层内的应变调节
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418524
J. Grym, D. Nohavica, P. Gladkov, J. Vanis, E. Hulicius, J. Pangrác, O. Pacherova, K. Piksová
{"title":"Strain accommodation within porous buffer layers in heteroepitaxial growth","authors":"J. Grym, D. Nohavica, P. Gladkov, J. Vanis, E. Hulicius, J. Pangrác, O. Pacherova, K. Piksová","doi":"10.1109/ASDAM.2012.6418524","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418524","url":null,"abstract":"We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1-x)As layers.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131552886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of 250-nm T-gate In52Al48As-In70Ga30As pHEMT using a novel solvent reflow technique at room temperature 采用新型溶剂回流技术在室温下制备250纳米t栅In52Al48As-In70Ga30As pHEMT
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418547
K. Ian, M. Exarchos, M. Missous
{"title":"Fabrication of 250-nm T-gate In52Al48As-In70Ga30As pHEMT using a novel solvent reflow technique at room temperature","authors":"K. Ian, M. Exarchos, M. Missous","doi":"10.1109/ASDAM.2012.6418547","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418547","url":null,"abstract":"An In<sub>52</sub>Al<sub>48</sub>As-In<sub>70</sub>Ga<sub>30</sub>As pHEMT with 250-nm T-Gate structure has been successfully fabricated by utilising a conventional 1μm i-Line lithography and a novel solvent reflow technique. The key advantage of this process is its capability of fabricating nano-scaled structures by using optical lithography with high throughput at very low temperature. The large gate shrinkage (>;0.70μm) from the original 1-μm foot print by solvent reflow, coupled with the fabrication of mushroom gate structures, yields a very high performance 250-nm T-gate device. For a 2×50μm device and with a 3μm drain-source distance, the maximum GM and IDS are 940mS/mm and 580mA/mm respectively and its associated cut-off frequency is 90 GHz.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132318535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Investigation of robust bandgap semiconductor structures using optical spectroscopy methods 用光谱学方法研究鲁棒带隙半导体结构
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418565
J. Kovác, R. Srnánek, I. Novotný
{"title":"Investigation of robust bandgap semiconductor structures using optical spectroscopy methods","authors":"J. Kovác, R. Srnánek, I. Novotný","doi":"10.1109/ASDAM.2012.6418565","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418565","url":null,"abstract":"In the paper we show and discuss the utilization of different optical spectroscopy methods such as photoluminescence or μ-Raman microscopy with UV or VIS excitation to analysis of robust bandgap materials properties particularly GaN and ZnO based structures. These techniques are capable to discover tiny changes in material properties induced by variety of influences such as material composition, doping, strain or temperature. The measurements of Raman spectra of annealed ZnO/GaP at different temperatures revealed that the structure annealed at 340°C show considerable changes in Raman spectra due to re-crystallization. The calibration measurements of Raman and PL temperature shift were done for AlGaN/GaN high electron mobility transistor (HEMT) structure with the aim to investigate the temperature distribution inside the HEMTs channel.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132405953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improving output power of terahertz heterodyne photomixer by impedance matching 采用阻抗匹配的方法提高太赫兹外差光电混合器的输出功率
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418552
L. Juul, M. Mikulics, M. Marso
{"title":"Improving output power of terahertz heterodyne photomixer by impedance matching","authors":"L. Juul, M. Mikulics, M. Marso","doi":"10.1109/ASDAM.2012.6418552","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418552","url":null,"abstract":"This work explores the possibilities of directly addressing the impedance mismatch problem in the design and modelling of a continuous wave photomixer employing high impedance antennas, based on conservative design rules and material choices. Two antenna designs derived from the folded dipole are presented and compared to published results from an existing device showing an improvement of up to 4.6 dB in output power. The possibilities of implementing a lumped element matching network are discussed.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121019501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Graphene-based FETs 石墨烯场效应晶体管
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418583
F. Schwierz
{"title":"Graphene-based FETs","authors":"F. Schwierz","doi":"10.1109/ASDAM.2012.6418583","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418583","url":null,"abstract":"Graphene is a purely two-dimensional carbon-based material that has attracted enormous attention in the recent past. In particular the high carrier mobilities observed in graphene have fuelled strong interest of device engineers in this material and soon graphene has been considered as the material for future electronics. It turned out, however, that the early assessments of the potential of graphene in mainstream electronics have been to optimistic. The present paper provides an overview on the current status of graphene transistors and discusses the strengths and weaknesses of these devices.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114742291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
GaN-based electronics GaN-based电子
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418587
M. Kuzuhara
{"title":"GaN-based electronics","authors":"M. Kuzuhara","doi":"10.1109/ASDAM.2012.6418587","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418587","url":null,"abstract":"An overview of III-nitride heterojunction FET technologies is given in this paper. Structural parameter designs of HEMTs, including various field-plate parameters, are described for high-voltage applications. For low-leakage operation, future HEMT technology on a free-standing GaN substrate is presented. Some of the theoretical design issues will be also addressed.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116184619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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