掺te InGaP层器件

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418544

R. Kúdela, D. Gregušová, R. Stoklas

{"title":"掺te InGaP层器件","authors":"R. Kúdela, D. Gregušová, R. Stoklas","doi":"10.1109/ASDAM.2012.6418544","DOIUrl":null,"url":null,"abstract":"Highly n-type doped and several nanometres thick layers are necessary for various device structures, especially HEMTs. We studied delta doping In1-XGaXP ternary with tellurium, the layers were grown by MOVPE. A low growth temperature of 560 °C was used to restrict the influence of diffusion, and diethyltellurium was used as the precursor. A maximum Hall sheet concentration of 2.75×1013 cm-2 was achieved. Very thin HEMT structures with high conductivity and HEMTs were prepared using the In1-XGaXP barriers doped with tellurium.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Devices with Te-doped InGaP layers\",\"authors\":\"R. Kúdela, D. Gregušová, R. Stoklas\",\"doi\":\"10.1109/ASDAM.2012.6418544\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Highly n-type doped and several nanometres thick layers are necessary for various device structures, especially HEMTs. We studied delta doping In1-XGaXP ternary with tellurium, the layers were grown by MOVPE. A low growth temperature of 560 °C was used to restrict the influence of diffusion, and diethyltellurium was used as the precursor. A maximum Hall sheet concentration of 2.75×1013 cm-2 was achieved. Very thin HEMT structures with high conductivity and HEMTs were prepared using the In1-XGaXP barriers doped with tellurium.\",\"PeriodicalId\":426709,\"journal\":{\"name\":\"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2012.6418544\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2012.6418544","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

对于各种器件结构，特别是hemt，需要高n型掺杂和几纳米厚的层。本文研究了碲在In1-XGaXP三元体系中的δ掺杂。采用560℃的低生长温度限制扩散的影响，以二乙基碲为前驱体。霍尔片的最大浓度为2.75×1013 cm-2。利用掺杂碲的In1-XGaXP势垒制备了具有高导电性的超薄HEMT结构。

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Devices with Te-doped InGaP layers

Highly n-type doped and several nanometres thick layers are necessary for various device structures, especially HEMTs. We studied delta doping In_1-XGa_XP ternary with tellurium, the layers were grown by MOVPE. A low growth temperature of 560 °C was used to restrict the influence of diffusion, and diethyltellurium was used as the precursor. A maximum Hall sheet concentration of 2.75×10¹³ cm^-2 was achieved. Very thin HEMT structures with high conductivity and HEMTs were prepared using the In_1-XGa_XP barriers doped with tellurium.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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