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Detector of fast neutrons based on silicon carbide epitaxial layers 基于碳化硅外延层的快中子探测器
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418580
B. Zat’ko, F. Dubecký, A. Šagátová, K. Sedlačková, P. Boháček, M. Sekáčová, V. Nečas
{"title":"Detector of fast neutrons based on silicon carbide epitaxial layers","authors":"B. Zat’ko, F. Dubecký, A. Šagátová, K. Sedlačková, P. Boháček, M. Sekáčová, V. Nečas","doi":"10.1109/ASDAM.2012.6418580","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418580","url":null,"abstract":"High quality liquid phase epitaxial layer of 4H-SiC with a thickness of 105 μm was used for fabrication of detector with the circular Schottky contact formed by using Au/Ni double layer contact metallization. The detector structure was characterized by current-voltage measurements showing low reverse current density at room temperature. Following the detection of fast neutrons was studied using the 239Pu-Be source with the mean neutron energy of about 4 MeV. Detected spectrum revealed silicon and carbon-recoil ion continuum. The simulation of detection efficiency vs. thickness of the detector active layer shows linear dependence.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127189524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The d-DotFET: MOSFET based on locally strained silicon d-DotFET:基于局部应变硅的MOSFET
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418228
J. Gerharz, J. Moers, G. Mussler, D. Grutzmacher
{"title":"The d-DotFET: MOSFET based on locally strained silicon","authors":"J. Gerharz, J. Moers, G. Mussler, D. Grutzmacher","doi":"10.1109/ASDAM.2012.6418228","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418228","url":null,"abstract":"In the d-DotFET device the strain introduced into a silicon capping layer grown on top of an ordered array of Ge islands is used. To achieve ordering and prevent randomly distribution of the Ge islands during epitaxial growth of Ge on silicon, template assisted self organization is utilized: the Si substrate is patterend by E-Beam lithography and subsequent reactive ion etching. During epitaxial growth by MBE the Ge islands grow in the predefined holes only, thus the position of the dots can be determined with a lateral accuracy of ±5 nm. This allows the alignment of the active device area to individual dots, thus utilizing the locally strained silicon layer. For MOSFETs were the dot will be preserved in the device, mobility enhancement of 22.5% can be achieved [1,2], while removing the dot leads to an mobility enhancement of 35%.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127248151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control 利用带隙工程和/或纳米结构尺寸控制的方法调整垂直InN纳米金字塔型光电探测器的光谱灵敏度
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418527
S. Trellenkamp, M. Mikulics, A. Winden, R. Adam, J. Moers, M. Marso, D. Grutzmacher, H. Hardtdegen
{"title":"Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control","authors":"S. Trellenkamp, M. Mikulics, A. Winden, R. Adam, J. Moers, M. Marso, D. Grutzmacher, H. Hardtdegen","doi":"10.1109/ASDAM.2012.6418527","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418527","url":null,"abstract":"We fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ~ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123765059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT) 基于InGaAs/InAlAs/InP的假晶HEMT (pHEMT)的直流表征
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418571
M. Ahmad, H. T. Butt, T. Tauqeer, M. Missous
{"title":"DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)","authors":"M. Ahmad, H. T. Butt, T. Tauqeer, M. Missous","doi":"10.1109/ASDAM.2012.6418571","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418571","url":null,"abstract":"An epitaxial structure comprising depletion mode In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT has been simulated using SILVACO. The main objective of our work was to incorporate a highly strained pseudomorphic In0.7Ga0.3As channel layer and study the effects of variations of supply layer thicknesses, delta doping and gate length. The important DC parameters such as pinch-off voltage, maximum drain current and transconductance are extracted from these simulations which suggest that our device architecture and material exhibits optimized performance. This research also focuses on inverse device modelling from experimental data and proposes calibration changes in epitaxial structure, geometry and doping of simulated pHEMT device in order to match simulated results with the measured results.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125364670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
THz generation and detection using ultrafast, high resistivity III–V semiconductor photoconductors at 1.55 Km pulse excitation 使用超快，高电阻率III-V半导体光导体在1.55 Km脉冲激励下产生和检测太赫兹
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418569
I. Kostakis, D. Saeedkia, M. Missous
{"title":"THz generation and detection using ultrafast, high resistivity III–V semiconductor photoconductors at 1.55 Km pulse excitation","authors":"I. Kostakis, D. Saeedkia, M. Missous","doi":"10.1109/ASDAM.2012.6418569","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418569","url":null,"abstract":"THz devices have been fabricated and evaluated as emitters and detectors in a time-domain spectroscopy (TDS) system. The devices employed planar aperture and dipole antenna geometries, which were made on the surface of novel Be doped lattice matched InGaAs-InAlAs multiple quantum well (MQW) structures grown at low temperature (LT) using Molecular Beam Epitaxy MBE. Such structures exhibited high dark resistivity (>; 105 Ω/sq), very short carrier lifetimes (<; 200 fs) and relatively high mobility (400 - 1800 cm2/Vs). These properties resulted in system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, which are among the highest ever reported for this material system.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123014238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaP/ZnO nanowires with a radial pn heterojunction 具有径向pn异质结的GaP/ZnO纳米线
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418586
A. Dujavova-Laurencikova, I. Novotný, J. Kováč, P. Eliáš, S. Hasenőhrl, J. Novák
{"title":"GaP/ZnO nanowires with a radial pn heterojunction","authors":"A. Dujavova-Laurencikova, I. Novotný, J. Kováč, P. Eliáš, S. Hasenőhrl, J. Novák","doi":"10.1109/ASDAM.2012.6418586","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418586","url":null,"abstract":"Core-shell p-GaP/n-ZnO nanowires (NWs) were prepared and studied. There was a radial pn heterojunction between the core and the shell. The NWs were processed in a two-step technique in which the GaP core and ZnO shell of an individual NW were separately provided with ohmic contacts. This required using two different types of ohmic metallization alloyed at different temperature, which also differed from the growth temperature. The contacts were processed with electron beam lithography and lift-off. The NWs were electrically characterized: the I-V characteristics measurement confirmed that a pn heterojunction formed between p-GaP core and n-ZnO shell of the NWs.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121164677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface 金属/SI GaAs/金属系统:界面处费米能级解钉的演示
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418582
F. Dubecký, P. Hubík, E. Gombia, D. Kindl, M. Dubecký, J. Mudroň, P. Boháček, M. Sekáčová
{"title":"Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface","authors":"F. Dubecký, P. Hubík, E. Gombia, D. Kindl, M. Dubecký, J. Mudroň, P. Boháček, M. Sekáčová","doi":"10.1109/ASDAM.2012.6418582","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418582","url":null,"abstract":"The work reports on the study of metal/semi-insulating GaAs/metal systems with different contacts: Mg, Gd, In and AuGeNi eutectic. Charge carrier transport through the interface is characterized by the current-voltage measurements. Observed results: i) opposite generally accepted “ohmic, bulk limited” charge transport at low bias, ii) are in contradiction with the thermionic emission model of charge transport in M-SI GaAs, and iii) demonstrate the unpinning of the Fermi level at the M-SI GaAs interface.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115915174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation 用于SPICE-like仿真的功率MOSFET 2/3-D电路电热模型
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418573
A. Chvála, D. Donoval, J. Marek, P. Pribytny, M. Molnar
{"title":"2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation","authors":"A. Chvála, D. Donoval, J. Marek, P. Pribytny, M. Molnar","doi":"10.1109/ASDAM.2012.6418573","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418573","url":null,"abstract":"New original SPICE-like simulation model for a power MOSFET based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a multi-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit SPICE-like simulations with distributed properties and 2-D thermal equivalent network is used for simulation of unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133903312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Investigation of MQW GaInNAs/GaAs p-i-n photodetector MQW GaInNAs/GaAs p-i-n光电探测器的研究
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418578
H. Khalil, N. Balkan, S. Mazzucato
{"title":"Investigation of MQW GaInNAs/GaAs p-i-n photodetector","authors":"H. Khalil, N. Balkan, S. Mazzucato","doi":"10.1109/ASDAM.2012.6418578","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418578","url":null,"abstract":"Transient photoconductivity (TPC), detectivity (D), and noise-equivalent power (NEP) in a dilute nitride based GaInNAs/GaAs multiple quantum well photodetector operating at λ >;1.3 μm are investigated at different temperatures from 100 to 300K. In this temperature range the TPC rise time increases from around 2 ns to 4 ns. The decay PC decays exponentially with two time constants; the fast one of about 5 ns which is independent on temperature, is followed by a slower one of 200 ns at T=100 K, and 520 ns at room temperature. The maximum detectivity of the photodetector is 6.6×109cm√(Hz)/W and the minimum NEP is 3.6×10-11W/√(Hz), indicating a reasonably fast and sensitive low-noise photodetector.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117302474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Surface potential measurements of a single ZnO nanofiber 单根ZnO纳米纤维的表面电位测量
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418226
A. Stafiniak, A. Szyszka, J. Prażmowska, B. Boratyński, A. Baranowska-Korczyc, K. Fronc, D. Elbaum, M. Tlaczala
{"title":"Surface potential measurements of a single ZnO nanofiber","authors":"A. Stafiniak, A. Szyszka, J. Prażmowska, B. Boratyński, A. Baranowska-Korczyc, K. Fronc, D. Elbaum, M. Tlaczala","doi":"10.1109/ASDAM.2012.6418226","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418226","url":null,"abstract":"In the present study determination of the impact of various gas atmospheres on the surface potential distribution of the electrospun ZnO nanofiber was carried out. Analysis of surface properties was performed using a Scanning Surface Potential Microscopy (SSPM). Obtained results proved homogeneity of the electrical and structural properties along the fiber. The effect of majority carriers depletion in metal oxides in oxidizing gas atmospheres was confirmed by changing the surface potential distribution of the fibers. Measurements performed in dry and humid atmosphere of nitrogen and air could clarify the role of water vapor on the properties of ZnO fibers.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130985596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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