基于InGaAs/InAlAs/InP的假晶HEMT (pHEMT)的直流表征

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418571

M. Ahmad, H. T. Butt, T. Tauqeer, M. Missous

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引用次数: 5

摘要

利用SILVACO模拟了由耗尽模式In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT组成的外延结构。我们工作的主要目的是加入一个高应变的伪晶In0.7Ga0.3As沟道层，并研究供电层厚度、δ掺杂和栅极长度变化的影响。从这些模拟中提取了重要的直流参数，如引脚电压，最大漏极电流和跨导，这表明我们的器件结构和材料表现出优化的性能。本研究还着重从实验数据进行逆器件建模，并提出了模拟pHEMT器件外延结构、几何形状和掺杂的校准变化，以使模拟结果与测量结果相匹配。

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DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)

An epitaxial structure comprising depletion mode In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT has been simulated using SILVACO. The main objective of our work was to incorporate a highly strained pseudomorphic In0.7Ga0.3As channel layer and study the effects of variations of supply layer thicknesses, delta doping and gate length. The important DC parameters such as pinch-off voltage, maximum drain current and transconductance are extracted from these simulations which suggest that our device architecture and material exhibits optimized performance. This research also focuses on inverse device modelling from experimental data and proposes calibration changes in epitaxial structure, geometry and doping of simulated pHEMT device in order to match simulated results with the measured results.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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