2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation

Abstract

New original SPICE-like simulation model for a power MOSFET based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a multi-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit SPICE-like simulations with distributed properties and 2-D thermal equivalent network is used for simulation of unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented.