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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems最新文献

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The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties 原位沉积AlOx薄膜对gaas基hfet性能的影响
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418545
D. Gregušová, R. Kúdela, R. Stoklas, M. Blaho, F. Gucmann, J. Fedor, P. Kordos
{"title":"The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties","authors":"D. Gregušová, R. Kúdela, R. Stoklas, M. Blaho, F. Gucmann, J. Fedor, P. Kordos","doi":"10.1109/ASDAM.2012.6418545","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418545","url":null,"abstract":"An in-situ deposited AlOx layer has a great influence on the transistor properties. We recently published a comparison between an AlGaAs/InGaAs/GaAs HFET (without any passivation) and a passivated MOSHFET (AlOx/AlGaAs/InGaAs/GaAs. This paper reports on properties of AlGaAs/GaAs transistors with an InGaAs channel passivated with an in-situ deposited AlOx layer. Also, the effectiveness of the passivation is discussed. The influence of an thin AlOx layer on properties of passivated HFET in comparison to the passivated MOSHFET and the unpassivated HFET was studied. The understanding of the functionality of the in-situ deposited layer in the passivation or modification of surface trapping states will contribute to the knowledge of GaAs surface potential control.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124033996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Towards future III-nitride based THz OEICs in the UV range 展望未来紫外波段iii -氮化物基太赫兹oeic
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418570
A. Fox, M. Mikulics, A. Winden, H. Hardtdegen, D. Gregušová, R. Adam, R. Sobolewski, M. Marso, D. Grutzmacher, P. Kordos
{"title":"Towards future III-nitride based THz OEICs in the UV range","authors":"A. Fox, M. Mikulics, A. Winden, H. Hardtdegen, D. Gregušová, R. Adam, R. Sobolewski, M. Marso, D. Grutzmacher, P. Kordos","doi":"10.1109/ASDAM.2012.6418570","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418570","url":null,"abstract":"A group III-nitride based MSM photodetector integrated with a MESFET in an OEIC circuit is presented exhibiting an exceptionally high 3 dB-bandwidth of 410 GHz. Advances towards circuit improvement by the future implementation of a gate recessed AlGaN/GaN HEMT device are reported. μ-PL is used directly on the processed device to optimize processing with respect to processing related strain and damage effects. It is demonstrated that μ-PL allows insight into device and material optimization which are the strategic key to improved future III-nitride based UV-optoelectronic integrated circuits (OEIC) operated up to the THz range.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130149195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Acoustic wave sensor system design consideration 声波传感器系统的设计思路
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418534
A. Laposa, M. Majer, M. Husák
{"title":"Acoustic wave sensor system design consideration","authors":"A. Laposa, M. Majer, M. Husák","doi":"10.1109/ASDAM.2012.6418534","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418534","url":null,"abstract":"In this paper, we present the development and considerations of simple acoustic wave chemical sensors. These sensors can be used for identifying environmental contaminants in large applications scale. Various finite element models of a Acoustic Wave sensors are developed using CoventorWare and 3D analysis is performed on the devices to study the acoustic wave propagation and characterize the device. The effects of the various interdigital transducers (IDT) design; intermediate layer on the propagation characteristics is also investigated.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126267687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrothermal analysis of In0.12Al0.88N/GaN HEMTs In0.12Al0.88N/GaN hemt的电热分析
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418556
M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmík, D. Donoval, J. Kováč, S. Selberherr
{"title":"Electrothermal analysis of In0.12Al0.88N/GaN HEMTs","authors":"M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmík, D. Donoval, J. Kováč, S. Selberherr","doi":"10.1109/ASDAM.2012.6418556","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418556","url":null,"abstract":"InAlN/GaN High Electron Mobility Transistors (HEMTs) are very popular because of their promising electrical and thermal properties. With the innovation of these structures and the development of fabrication processes, there are still many serious issues like current collapse or self-heating effects, which must be addressed. In this work, the DC device behavior is studied both experimentally and by means of two-dimensional hydrodynamic device simulations. Very good agreement between measurements and simulations with Minimos-NT is achieved using the hydrodynamic transport model including self-heating and impact ionization effects.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115561275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of single-crystal CVD diamond and SiC detectors for diagnostics of ion emission from laser plasmas 单晶CVD金刚石和SiC探测器在激光等离子体离子发射诊断中的应用
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418519
L. Ryć, L. Calcagno, F. Dubecký, D. Margarone, T. Nowak, P. Parys, M. Pfeifer, F. Riesz, L. Torrisi
{"title":"Application of single-crystal CVD diamond and SiC detectors for diagnostics of ion emission from laser plasmas","authors":"L. Ryć, L. Calcagno, F. Dubecký, D. Margarone, T. Nowak, P. Parys, M. Pfeifer, F. Riesz, L. Torrisi","doi":"10.1109/ASDAM.2012.6418519","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418519","url":null,"abstract":"The application of single-crystal CVD diamond and SiC detectors for the measurement of ions generated from laser-produced plasmas is reported. It was found that detectors are mostly sensitive to fast ions and protons. Optimization of the diagnostic system based on the detectors is discussed.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115021241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT 0.25µm栅长GaN HEMT中电流色散的TCAD建模
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 1900-01-01 DOI: 10.1109/ASDAM.2012.6418566
S. Faramehr, P. Igić, K. Kalna
{"title":"TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT","authors":"S. Faramehr, P. Igić, K. Kalna","doi":"10.1109/ASDAM.2012.6418566","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418566","url":null,"abstract":"Current dispersion due to acceptor-type defects acting as electron traps are studied using 2D TCAD transient simulations. High and low drain pulse voltages are applied to study a dynamic picture of trapping and de-trapping of electrons using Drift Diffusion and Hydrodynamic transport models. In addition, Schottky electron tunnelling is employed to transient simulations in the presence of different densities of traps in the barrier to investigate how tunnelling affects the drain current at off-state.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131599285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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