0.25µm栅长GaN HEMT中电流色散的TCAD建模

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 1900-01-01 DOI:10.1109/ASDAM.2012.6418566

S. Faramehr, P. Igić, K. Kalna

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引用次数: 2

摘要

利用二维TCAD瞬态模拟研究了受体型缺陷作为电子陷阱引起的电流色散。利用漂移扩散和流体动力学输运模型，应用高漏极和低漏极脉冲电压来研究电子捕获和释放的动态图像。此外，利用肖特基电子隧穿进行势垒中存在不同密度陷阱的瞬态模拟，研究了隧穿对失态漏极电流的影响。

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TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

Current dispersion due to acceptor-type defects acting as electron traps are studied using 2D TCAD transient simulations. High and low drain pulse voltages are applied to study a dynamic picture of trapping and de-trapping of electrons using Drift Diffusion and Hydrodynamic transport models. In addition, Schottky electron tunnelling is employed to transient simulations in the presence of different densities of traps in the barrier to investigate how tunnelling affects the drain current at off-state.

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来源期刊

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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