原位沉积AlOx薄膜对gaas基hfet性能的影响

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418545

D. Gregušová, R. Kúdela, R. Stoklas, M. Blaho, F. Gucmann, J. Fedor, P. Kordos

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摘要

原位沉积AlOx层对晶体管的性能有很大的影响。我们最近发表了AlGaAs/InGaAs/GaAs HFET(没有任何钝化)和钝化MOSHFET (AlOx/AlGaAs/InGaAs/GaAs)之间的比较。本文报道了原位沉积AlOx层钝化InGaAs通道的AlGaAs/GaAs晶体管的性能。并对钝化的效果进行了讨论。通过对比钝化MOSHFET和未钝化HFET，研究了薄层AlOx对钝化HFET性能的影响。了解原位沉积层在表面俘获态钝化或修饰中的功能将有助于了解砷化镓表面电位控制。

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The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties

An in-situ deposited AlOx layer has a great influence on the transistor properties. We recently published a comparison between an AlGaAs/InGaAs/GaAs HFET (without any passivation) and a passivated MOSHFET (AlOx/AlGaAs/InGaAs/GaAs. This paper reports on properties of AlGaAs/GaAs transistors with an InGaAs channel passivated with an in-situ deposited AlOx layer. Also, the effectiveness of the passivation is discussed. The influence of an thin AlOx layer on properties of passivated HFET in comparison to the passivated MOSHFET and the unpassivated HFET was studied. The understanding of the functionality of the in-situ deposited layer in the passivation or modification of surface trapping states will contribute to the knowledge of GaAs surface potential control.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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