In0.12Al0.88N/GaN hemt的电热分析

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418556

M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmík, D. Donoval, J. Kováč, S. Selberherr

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引用次数: 0

摘要

氮化铟/氮化镓高电子迁移率晶体管(hemt)由于其良好的电学和热性能而非常受欢迎。随着这些结构的创新和制造工艺的发展，仍然存在许多严重的问题，如电流崩溃或自热效应，必须加以解决。在本工作中，直流装置的行为进行了实验研究和二维流体动力装置模拟。利用包括自热和冲击电离效应在内的流体动力输运模型，Minimos-NT的测量结果与模拟结果非常吻合。

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Electrothermal analysis of In0.12Al0.88N/GaN HEMTs

InAlN/GaN High Electron Mobility Transistors (HEMTs) are very popular because of their promising electrical and thermal properties. With the innovation of these structures and the development of fabrication processes, there are still many serious issues like current collapse or self-heating effects, which must be addressed. In this work, the DC device behavior is studied both experimentally and by means of two-dimensional hydrodynamic device simulations. Very good agreement between measurements and simulations with Minimos-NT is achieved using the hydrodynamic transport model including self-heating and impact ionization effects.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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