展望未来紫外波段iii -氮化物基太赫兹oeic

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418570

A. Fox, M. Mikulics, A. Winden, H. Hardtdegen, D. Gregušová, R. Adam, R. Sobolewski, M. Marso, D. Grutzmacher, P. Kordos

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引用次数: 0

摘要

提出了一种在OEIC电路中集成MESFET的iii族氮化物基MSM光电探测器，其3db带宽高达410 GHz。本文报道了栅极嵌入式AlGaN/GaN HEMT器件在电路改进方面的进展。μ-PL直接用于被加工器件上，以优化加工相关的应变和损伤效果。结果表明，μ-PL可以深入了解器件和材料的优化，这是改进未来工作在太赫兹范围内的基于iii -氮化物的紫外光电集成电路(OEIC)的战略关键。

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Towards future III-nitride based THz OEICs in the UV range

A group III-nitride based MSM photodetector integrated with a MESFET in an OEIC circuit is presented exhibiting an exceptionally high 3 dB-bandwidth of 410 GHz. Advances towards circuit improvement by the future implementation of a gate recessed AlGaN/GaN HEMT device are reported. μ-PL is used directly on the processed device to optimize processing with respect to processing related strain and damage effects. It is demonstrated that μ-PL allows insight into device and material optimization which are the strategic key to improved future III-nitride based UV-optoelectronic integrated circuits (OEIC) operated up to the THz range.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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