金属/SI GaAs/金属系统:界面处费米能级解钉的演示

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418582

F. Dubecký, P. Hubík, E. Gombia, D. Kindl, M. Dubecký, J. Mudroň, P. Boháček, M. Sekáčová

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摘要

本文报道了不同接触点Mg、Gd、In和AuGeNi共晶金属/半绝缘GaAs/金属体系的研究。电荷载流子通过界面的输运由电流-电压测量来表征。观察结果:1)与普遍接受的“欧姆、体限”低偏压下的电荷输运相反，2)与M-SI GaAs中电荷输运的热离子发射模型相矛盾，3)证明了M-SI GaAs界面上费米能级的解钉。

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Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface

The work reports on the study of metal/semi-insulating GaAs/metal systems with different contacts: Mg, Gd, In and AuGeNi eutectic. Charge carrier transport through the interface is characterized by the current-voltage measurements. Observed results: i) opposite generally accepted “ohmic, bulk limited” charge transport at low bias, ii) are in contradiction with the thermionic emission model of charge transport in M-SI GaAs, and iii) demonstrate the unpinning of the Fermi level at the M-SI GaAs interface.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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