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Experimental set-up for on-chip characterization of electronic devices by Time Domain Reflectometry 用时域反射法对电子器件进行片上表征的实验装置
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418528
L. Sladek, A. Šatka, M. Bernat, D. Donoval, J. Kovác
{"title":"Experimental set-up for on-chip characterization of electronic devices by Time Domain Reflectometry","authors":"L. Sladek, A. Šatka, M. Bernat, D. Donoval, J. Kovác","doi":"10.1109/ASDAM.2012.6418528","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418528","url":null,"abstract":"The paper describes the principle of the Time Domain Reflectometry (TDR) method for on-chip measurement and characterization of transient and frequency characteristics of electronic devices, required instrumentation and developed measurement setup for TDR measurements with time resolution up to 15ps. Due to parasitic effects caused by packaging of electronic devices and interconnections, measurement is realized as on-chip using microscopic probe station. Functionality of the realized measurement setup is demonstrated by measurement of input and output impedances of aluminium gallium nitride / gallium nitride (AlGaN/GaN) high electron mobility transistor (HEMT).","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"105 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131314951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Photoreflectance study of the role of a thin AlOx layer in a GaAs surface passivation and the Schottky barrier forming 薄AlOx层在GaAs表面钝化和肖特基势垒形成中的作用的光反射研究
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418525
M. Kučera, R. Kúdela, J. Novák
{"title":"Photoreflectance study of the role of a thin AlOx layer in a GaAs surface passivation and the Schottky barrier forming","authors":"M. Kučera, R. Kúdela, J. Novák","doi":"10.1109/ASDAM.2012.6418525","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418525","url":null,"abstract":"We studied UN+-type GaAs(100) samples covered with a thin AlOx passivation layer and with Ni metallization of variable thicknesses. Photoreflectance spectroscopy was used to measure the electric field in the undoped part of the samples. The position of the surface Fermi level, the amount of the electric charge trapped at the surface, and the effect of the pinning were investigated. The AlOx layer did not change the pinning compared to the UN+ sample without AlOx. After metallisation, the barrier height was markedly higher in the MIS structures with AlOx, indicating a much weaker pinning than in the structures with native oxides. Several samples covered with metallisation layers of different thickness were prepared. The highest barrier was reached for the 3 nm Ni / 3 nm Au stack.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116149784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gates of AlGaN/GaN HEMT for high temperature gas sensing applications 用于高温气敏应用的AlGaN/GaN HEMT栅极
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418563
I. Ryger, G. Vanko, P. Kunzo, T. Lalinsky, J. Dzuba, M. Vallo, L. Satrapinsky, T. Plecenik, A. Chvála
{"title":"Gates of AlGaN/GaN HEMT for high temperature gas sensing applications","authors":"I. Ryger, G. Vanko, P. Kunzo, T. Lalinsky, J. Dzuba, M. Vallo, L. Satrapinsky, T. Plecenik, A. Chvála","doi":"10.1109/ASDAM.2012.6418563","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418563","url":null,"abstract":"The sensing capability of the Pt or Ir based Schottky gate electrodes on AlGaN/GaN heterostructures at elevated temperatures can be improved. It is carried by inserting a thin interlayer of conductive metal oxide between the sensing electrode and the semiconductor barrier layer. High temperature sensing ability of new composite gates is evaluated by detection of hydrogen. We investigate the different absorbing layers and the influence of composition and interfacial oxide layer thickness on sensitivity and response time of gas sensors.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117230699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures 改变势垒层参数对GaN/AlGaN/GaN肖特基结构隧穿的影响
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418531
J. Racko, M. Mikolasek, R. Granzner, N. Al Mustafa, F. Schwierz, J. Breza
{"title":"The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures","authors":"J. Racko, M. Mikolasek, R. Granzner, N. Al Mustafa, F. Schwierz, J. Breza","doi":"10.1109/ASDAM.2012.6418531","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418531","url":null,"abstract":"We have designed and applied a new trap-assisted-tunnelling model to simulate GaN/AlGaN/GaN Schottky structures. The influence was investigated of a varied cap thickness on the overall current flow. It is shown that large currents experimentally observed in such a reverse biased Schottky structure have a tunnelling nature and can be described by our new model.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125994769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Emission and absorption properties of patterned LED with 2D PhC 二维PhC图案LED的发射和吸收特性
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418538
L. Suslik, D. Pudiš, J. Škriniarová, J. Kovác, I. Kubicová, J. Novák, S. Hascik
{"title":"Emission and absorption properties of patterned LED with 2D PhC","authors":"L. Suslik, D. Pudiš, J. Škriniarová, J. Kovác, I. Kubicová, J. Novák, S. Hascik","doi":"10.1109/ASDAM.2012.6418538","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418538","url":null,"abstract":"Photonic crystals (PhC) create platform for a new generation of optical and optoelectronical devices. The PhC structures have been patterned in GaAs-based light emitting diodes in order to modify their optical properties. Patterned diodes with two-dimensional PhC were investigated by measurements of emission and detection properties. Measured dependencies revealed effect of PhC on emission and photocurrent spectrum.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125657790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photocurrents in double-layer organic field-effect transistors 双层有机场效应晶体管中的光电流
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418514
J. Jakabovic, Martin Weis, Jaroslav Kováč, D. Donoval, M. Donoval, J. Cirák, Yingquan Peng, Jipeng Xie, W. Lv, Ting Yang, B. Yao, Ying Wang
{"title":"Photocurrents in double-layer organic field-effect transistors","authors":"J. Jakabovic, Martin Weis, Jaroslav Kováč, D. Donoval, M. Donoval, J. Cirák, Yingquan Peng, Jipeng Xie, W. Lv, Ting Yang, B. Yao, Ying Wang","doi":"10.1109/ASDAM.2012.6418514","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418514","url":null,"abstract":"Photogenerated carriers in active double-layer 3,4,9,10-perylenetetracarboxylic dianhydride/copper phthalocyanine (PTCDA/CuPc) organic field-effect transistor (OFET) has been investigated. The PTCDA and CuPc layers have n- and p-type conductivities, respectively; thus, PTCDA can be assumed as an acceptor and CuPc as a donor in the meaning of photovoltaic device. It has been found that the charges are generated in the bulk of the organic material rather than close to the organic-organic interface.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131709710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Arsenide-based terahertz materials and devices for 800 and 1550 nm excitations 用于800和1550纳米激发的砷基太赫兹材料和器件
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418554
M. Missous, I. Kostakis, D. Saeedkia
{"title":"Arsenide-based terahertz materials and devices for 800 and 1550 nm excitations","authors":"M. Missous, I. Kostakis, D. Saeedkia","doi":"10.1109/ASDAM.2012.6418554","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418554","url":null,"abstract":"Photoconductors based on III-V semiconductor compounds, and suitable for 800 and 1550 nm excitations, were grown using the low temperature growth technique in a Molecular Beam Epitaxy (MBE) system. Photoconductive antennas were fabricated and tested in a time-domain spectroscopy (TDS) system. The photoconductors were synthesised to absorb light at the wavelengths of 800 nm or 1.55 μm. The photoconductive antennas were composed of aperture and dipole structures. A combination of the unique material characteristics, such as femtosecond carrier lifetime, high dark resistivity and high mobility, and the geometry of the antenna structures resulted in the development of fully operational THz devices at both excitation wavelengths.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131840944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nucleation and annihilation of magnetic vortices in Pacman-like nanodots observed by micro-Hall probes 用微霍尔探针观察吃豆人纳米点中磁涡的成核和湮灭
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418227
M. Precner, D. Gregušová, J. Soltýs, J. Fedor, F. Gucmann, J. Tóbik, R. Kúdela, V. Cambel
{"title":"Nucleation and annihilation of magnetic vortices in Pacman-like nanodots observed by micro-Hall probes","authors":"M. Precner, D. Gregušová, J. Soltýs, J. Fedor, F. Gucmann, J. Tóbik, R. Kúdela, V. Cambel","doi":"10.1109/ASDAM.2012.6418227","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418227","url":null,"abstract":"We have used micro-Hall probe for the study of vortex dynamics in micromagnetic objects with lowered symmetry. The Pacman-like nanodot of the diameter of 1 μm was placed directly on the Hall probe and the signal was red in band resistance configuration. We show that the vortex nucleation and annihilation, as well as s-and c-state creation/annihilation are clearly visible on the magnetization reversal characteristics at 77 K. The experimental characteristics is in good agreement with the one calculated by micromagnetic simulations.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121948686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Material and device issues of InAlN/GaN heterostructures InAlN/GaN异质结构的材料和器件问题
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418558
J. Kuzmík
{"title":"Material and device issues of InAlN/GaN heterostructures","authors":"J. Kuzmík","doi":"10.1109/ASDAM.2012.6418558","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418558","url":null,"abstract":"Motivation for replacing the AlGaN barrier layer of the conventional AlGaN/GaN HEMTs with lattice-matched InAlN is explained. State-of-the-art InAlN/GaN HEMTs are reviewed; emphasize is given to the analysis of the normally-off InAlN/GaN HEMTs using either a gate recessing or a concept of polarization engineering. Reliability issues of InAlN/GaN HEMTs are studied for different stress conditions and results discussed in respect to AlGaN/GaN HEMTs. Concept of InAlN/GaN/AlGaN double-heterostructure QW HEMT is shown to be more effective in blocking the hot electron injection in to the buffer. Novel InN-channel based devices are suggested with a relaxed InAlN buffer. The InN/InAlN-based HEMTs should be the choice for reaching a THz frequency range.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124269274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Relaxation of low-frequency noise in AlGaN/GaN HEMTs AlGaN/GaN hemt中低频噪声的弛豫
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418568
A. Šatka, K. Rendek, J. Priesol
{"title":"Relaxation of low-frequency noise in AlGaN/GaN HEMTs","authors":"A. Šatka, K. Rendek, J. Priesol","doi":"10.1109/ASDAM.2012.6418568","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418568","url":null,"abstract":"In this contribution we report on low-frequency (LF) noise spectra of aluminium gallium nitride / gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) subjected to the illumination by photons of energy Eph bellow the energy band gap Eg of GaN. Change of LF noise spectra of the drain voltage noise and the gate current noise during the illumination and its slow relaxation to initial value after the illumination termination during the first 10 minute interval have been observed. These changes were related to time dependent changes of operating parameters (VDS, IDS and IGS) and discussed in terms of the traps located in AlGaN/GaN HEMT structure.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124766286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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