用时域反射法对电子器件进行片上表征的实验装置

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418528

L. Sladek, A. Šatka, M. Bernat, D. Donoval, J. Kovác

{"title":"用时域反射法对电子器件进行片上表征的实验装置","authors":"L. Sladek, A. Šatka, M. Bernat, D. Donoval, J. Kovác","doi":"10.1109/ASDAM.2012.6418528","DOIUrl":null,"url":null,"abstract":"The paper describes the principle of the Time Domain Reflectometry (TDR) method for on-chip measurement and characterization of transient and frequency characteristics of electronic devices, required instrumentation and developed measurement setup for TDR measurements with time resolution up to 15ps. Due to parasitic effects caused by packaging of electronic devices and interconnections, measurement is realized as on-chip using microscopic probe station. Functionality of the realized measurement setup is demonstrated by measurement of input and output impedances of aluminium gallium nitride / gallium nitride (AlGaN/GaN) high electron mobility transistor (HEMT).","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"105 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Experimental set-up for on-chip characterization of electronic devices by Time Domain Reflectometry\",\"authors\":\"L. Sladek, A. Šatka, M. Bernat, D. Donoval, J. Kovác\",\"doi\":\"10.1109/ASDAM.2012.6418528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper describes the principle of the Time Domain Reflectometry (TDR) method for on-chip measurement and characterization of transient and frequency characteristics of electronic devices, required instrumentation and developed measurement setup for TDR measurements with time resolution up to 15ps. Due to parasitic effects caused by packaging of electronic devices and interconnections, measurement is realized as on-chip using microscopic probe station. Functionality of the realized measurement setup is demonstrated by measurement of input and output impedances of aluminium gallium nitride / gallium nitride (AlGaN/GaN) high electron mobility transistor (HEMT).\",\"PeriodicalId\":426709,\"journal\":{\"name\":\"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems\",\"volume\":\"105 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2012.6418528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2012.6418528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了用于芯片上测量和表征电子器件瞬态和频率特性的时域反射(TDR)方法的原理，所需的仪器和开发的TDR测量装置，时间分辨率高达15ps。由于电子器件封装和互连所产生的寄生效应，测量是在片上利用微型探针站实现的。通过测量氮化镓铝/氮化镓(AlGaN/GaN)高电子迁移率晶体管(HEMT)的输入和输出阻抗，证明了所实现的测量装置的功能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Experimental set-up for on-chip characterization of electronic devices by Time Domain Reflectometry

The paper describes the principle of the Time Domain Reflectometry (TDR) method for on-chip measurement and characterization of transient and frequency characteristics of electronic devices, required instrumentation and developed measurement setup for TDR measurements with time resolution up to 15ps. Due to parasitic effects caused by packaging of electronic devices and interconnections, measurement is realized as on-chip using microscopic probe station. Functionality of the realized measurement setup is demonstrated by measurement of input and output impedances of aluminium gallium nitride / gallium nitride (AlGaN/GaN) high electron mobility transistor (HEMT).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

自引率

0.00%

发文量