The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures

Abstract

We have designed and applied a new trap-assisted-tunnelling model to simulate GaN/AlGaN/GaN Schottky structures. The influence was investigated of a varied cap thickness on the overall current flow. It is shown that large currents experimentally observed in such a reverse biased Schottky structure have a tunnelling nature and can be described by our new model.