Properties of Al2O3 thin films grown by atomic layer deposition

Abstract

Thin Al₂O₃ films were prepared by thermal and plasma enhanced atomic layer deposition at 100 and 200°C. Growth per cycle ranges from 0.108 to 0.139 nm/cycle. Composition of the films was investigated by XPS. Carbon impurity was higher for the films grown at 100°C. The films grown at 200°C were slightly oxygen deficient.The Al₂O₃ films grown at low temperatures have promising applications in microelectronics.