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Relaxation of low-frequency noise in AlGaN/GaN HEMTs AlGaN/GaN hemt中低频噪声的弛豫
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418568
A. Šatka, K. Rendek, J. Priesol
{"title":"Relaxation of low-frequency noise in AlGaN/GaN HEMTs","authors":"A. Šatka, K. Rendek, J. Priesol","doi":"10.1109/ASDAM.2012.6418568","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418568","url":null,"abstract":"In this contribution we report on low-frequency (LF) noise spectra of aluminium gallium nitride / gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) subjected to the illumination by photons of energy Eph bellow the energy band gap Eg of GaN. Change of LF noise spectra of the drain voltage noise and the gate current noise during the illumination and its slow relaxation to initial value after the illumination termination during the first 10 minute interval have been observed. These changes were related to time dependent changes of operating parameters (VDS, IDS and IGS) and discussed in terms of the traps located in AlGaN/GaN HEMT structure.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124766286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Interface traps in insulator/AlGaN/GaN heterostructure capacitors 绝缘体/AlGaN/GaN异质结构电容器中的界面陷阱
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418555
J. Osvald
{"title":"Interface traps in insulator/AlGaN/GaN heterostructure capacitors","authors":"J. Osvald","doi":"10.1109/ASDAM.2012.6418555","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418555","url":null,"abstract":"We have modeled and simulated capacitance voltage characteristics of metal/insulator/semiconductor heterostructure capacitor. The heterostructure was formed by AlGaN/GaN. Two types of distributions of interface traps in the AlGaN energy gap were used in our calculations and the two types of interface traps were assumed to be present at the insulator/AlGaN interface - an acceptor type and a donor type traps. The first one is obviously obtained in the upper part of the energy gap and the second one in the lower part of the gap. We obtained C-V characteristics with two capacitance steps which are sometimes obtained in experimental practice. The behavior and a shape of the C-V curves have been analyzed. The two steps in the characteristics correspond to the AlGaN and the GaN layers depletion. We observed also the stretching of the C-V curves as a result of interface traps presence in the structure.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125781460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical characterization of GaSb buried p-n junctions GaSb埋设p-n结的电学特性
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418523
M. Baldini, E. Gombia, A. Parisini, L. Tarricone, C. Ghezzi, C. Frigeri, A. Gasparotto
{"title":"Electrical characterization of GaSb buried p-n junctions","authors":"M. Baldini, E. Gombia, A. Parisini, L. Tarricone, C. Ghezzi, C. Frigeri, A. Gasparotto","doi":"10.1109/ASDAM.2012.6418523","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418523","url":null,"abstract":"Buried GaSb junctions were realized through Zn diffusion in Te-doped GaSb bulk crystals, the p-dopant being supplied through the epitaxial deposition of a heavily Zn-doped GaAs layer on GaSb. Structural and electrical investigations confirm the build-up of buried junctions, induced by Zn diffusion within GaSb, with satisfying rectifying properties. Surprisingly, the p-n junctions are formed more deeply with respect to the Zn diffusion front. A local rising up of the native acceptor density is assumed to drive the p-type conductivity conversion of the GaSb substrate beyond the Zn penetration depth.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124932394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron cyclotron resonance plasma technology of silicon carbon nitride thin films 氮化硅碳薄膜的电子回旋共振等离子体技术
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418516
J. Huran, M. Kučera, P. Boháček, A. Kobzev, A. Kleinová, M. Sekáčová, E. Kováčová
{"title":"Electron cyclotron resonance plasma technology of silicon carbon nitride thin films","authors":"J. Huran, M. Kučera, P. Boháček, A. Kobzev, A. Kleinová, M. Sekáčová, E. Kováčová","doi":"10.1109/ASDAM.2012.6418516","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418516","url":null,"abstract":"Silicon carbon nitride films were grown at various deposition temperature from 350 to 550°C by means of electron cyclotron resonance (ECR) plasma deposition with gas mixture: 5% SiH4 in N2(20 sccm), CH4(10 sccm). A p-type silicon wafer with resistivity 2-7 Ωcm and (100) orientation was used as the substrate for the SiCN films. The concentration of elements in the SiCN films was determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analytical method simultaneously. Chemical compositions were analysed by infrared (IR) spectroscopy. Photoluminescence (PL) spectra were measured at 293 K. The concentration of hydrogen was decreased with increasing deposition temperature. The IR results showed the presence of Si-C, Si-N, Si-H, C-H, C-N, N-H and Si-O bonds. The PL results showed increassing PL intensity with increasing a sample deposition temperature from 350 to 450°C and decreasing PL intensity with increasing a sample deposition temperature from 450 to 550°C.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121562935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics of GaN MOSFET with stacked gate dielectric of MgO and TiO2 MgO和TiO2叠合栅介电体GaN MOSFET的特性
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418530
Gourab Dutta
{"title":"Characteristics of GaN MOSFET with stacked gate dielectric of MgO and TiO2","authors":"Gourab Dutta","doi":"10.1109/ASDAM.2012.6418530","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418530","url":null,"abstract":"This paper demonstrates the electrical characteristics of stacked-gate enhancement mode n-channel gallium nitride (GaN) based metal-oxide-semiconductor field effect transistor. Magnesium oxide and titanium oxide are used as stacked gate dielectrics. Use of these oxides shows promising characteristics with GaN. Thickness variation of stacked gate oxides while keeping total oxide thickness constant shows significant effect in device performance including drain current, threshold voltage, transconductance, gate leakage current and device breakdown characteristics. Effect of dielectric thickness variation on drain induced barrier lowering (DIBL) and Ion/Ioff ratio are also analysed. Two dimensional simulation is used to predict the effect of thickness variation of stacked-gate-oxide on electrical characteristics of GaN based metal-oxide-semiconductor field effect transistor.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132457379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical and electrical characterization of photonic crystal light emitting diodes 光子晶体发光二极管的光学和电学特性
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418579
P. Hronec, J. Kovác, J. Škriniarová, L. Suslik
{"title":"Optical and electrical characterization of photonic crystal light emitting diodes","authors":"P. Hronec, J. Kovác, J. Škriniarová, L. Suslik","doi":"10.1109/ASDAM.2012.6418579","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418579","url":null,"abstract":"The paper deals with electrical and optical characterization of the Al0.295Ga0.705As/GaAs multi-quantum well light emitting diode (MQW LED) structure including two-dimensional photonic crystals (2D PhC) patterned in the LED surface. The active region of LED consists of three quantum wells with emitting maximum at 845 nm. The effect of photonic crystal with square symmetry and 500 nm grating period on electrical and optical properties of LED was investigated. The measurements of L-I characteristics show, that app. 3 times higher optical power from LED structure was achieved using photonic crystals in comparison with structure without PhC.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133511408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal stability of IrO2 gate based AlGaN/GaN HEMT 基于IrO2栅极的AlGaN/GaN HEMT的热稳定性
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418529
M. Vallo, T. Lalinsky, G. Vanko, I. Ryger, J. Dzuba, M. Drzik
{"title":"Thermal stability of IrO2 gate based AlGaN/GaN HEMT","authors":"M. Vallo, T. Lalinsky, G. Vanko, I. Ryger, J. Dzuba, M. Drzik","doi":"10.1109/ASDAM.2012.6418529","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418529","url":null,"abstract":"We investigate a thermal stability of iridium oxide (IrO2) gate based AlGaN/GaN HEMT devices by using a long-term thermal stress at 300 °C and 450 °C for 48 hours in air atmosphere. AlGaN/GaN high electron mobility transistors with the gate contact based on IrO2 were designed for high temperature applications. IrO2 gate interfacial layer is formed by high temperature oxidation of 15nm thick Ir gate contact layer (T = 500 - 800 °C, for 1 min in O2 ambience) to provide a high temperature stable gate interface. IrO2 gate based AlGaN/GaN HEMT show excellent thermal stability after long-term storage tests at 450 °C for 48 hours in the air, and even leakage current of Schottky gate contacts is continual decreasing with the storage time. AlGaN/GaN HEMTs with Schottky gate contacts based on high temperature formed IrO2 could be predetermined for sensing applications at high temperatures.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129590999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of 2,6-bis(5′-hexyl-2,2′-bithiophene-5-yl) naphthalene organic transistors: Effect of preparation conditions 2,6-二(5 ' -己基-2,2 ' -二噻吩-5-基)萘有机晶体管的电学性能:制备条件的影响
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418542
M. Weis, J. Jakabovic, D. Donoval, J. Filo, M. Putala
{"title":"Electrical properties of 2,6-bis(5′-hexyl-2,2′-bithiophene-5-yl) naphthalene organic transistors: Effect of preparation conditions","authors":"M. Weis, J. Jakabovic, D. Donoval, J. Filo, M. Putala","doi":"10.1109/ASDAM.2012.6418542","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418542","url":null,"abstract":"Organic field-effect transistors (OFETs) based on solution-processable organic semiconductors have experienced wide range of applications. Here we report fabrication, structure, and electrical properties of 2,6-bis(5'-hexyl-2,2'-bithiophen-5-yl)naphthalene (H2T26N) OFETs. The high-temperature tilt-casting has been used for preparation of giant grains up to 300 μm. Film structure as well as effective mobilities has been found dependent on fabrication temperature, while the threshold voltage was conserved. Electrical properties are discussed accordance to the film structure and compared with other common solution-processable organic semiconductors.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132494250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characterization of the InAlN/GaN heterostructures by capacitance methods 用电容法研究InAlN/GaN异质结构的电学特性
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418557
L. Stuchlíková, M. Petrus, J. Kováč, J. Rybár, L. Harmatha, D. Donoval, J. Benkovska, H. Behmenburg, M. Heuken
{"title":"Electrical characterization of the InAlN/GaN heterostructures by capacitance methods","authors":"L. Stuchlíková, M. Petrus, J. Kováč, J. Rybár, L. Harmatha, D. Donoval, J. Benkovska, H. Behmenburg, M. Heuken","doi":"10.1109/ASDAM.2012.6418557","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418557","url":null,"abstract":"This paper highlights the electrical characterization of 4 types of the Schottky structures prepared on InAlN/GaN epi-layer designed for HEMT's with the AlN buffer layer and semi-insulating 6H-SiC substrate, which have different mechanical strain due to different growth conditions, using capacitance-voltage and Deep Level Transient Spectroscopy methods (DLTS). The sudden fall of capacitance in the range of reverse voltage from -2.5 to -3.3 V is caused by heterostructure's interface depletion. According to the DLTS measurement it is highly probable that the similar system of defects is present in all samples. Parameters of 7 hole-like traps were identified. Three of them HT1 (1.48 eV) HT2 (1.06 eV) and HT4 (1.01 eV) are certainly present in two structures and one HT3 (1.24 eV) in three structure. The highest concentration of defects has structure with the highest mechanical strain (Strain Raman 2 GPa).","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128219921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Laser ablation: A supporting technique to micromachining of SiC 激光烧蚀:碳化硅微加工的配套技术
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418518
G. Vanko, J. Zehetner, P. Choleva, T. Lalinsky, P. Hudek
{"title":"Laser ablation: A supporting technique to micromachining of SiC","authors":"G. Vanko, J. Zehetner, P. Choleva, T. Lalinsky, P. Hudek","doi":"10.1109/ASDAM.2012.6418518","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418518","url":null,"abstract":"We present an effective fabrication method of AlGaN/GaN membrane on SiC for MEMS sensors applications. It employs laser ablation as a supporting technique to the plasma enhanced etching methods. Circular patterns transferred deeply into bulk SiC substrates fabricated by ablation using (1) excimer laser and (2) femtosecond (fs) laser tools were compared. We found that the fs laser tool is more suitable for bulk micromachining of SiC because of the clearness of the process. The additional higher thermal load can be also suppressed. A simple laser cleaning procedure was found allowing us to fabricate deep structures without the ablation process retardation by debris formation.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122089659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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