AlGaN/GaN hemt中低频噪声的弛豫

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418568

A. Šatka, K. Rendek, J. Priesol

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引用次数: 2

摘要

在本文中，我们报道了氮化镓铝/氮化镓(AlGaN/GaN)高电子迁移率晶体管(HEMTs)在GaN的能带隙Eg以下的能量Eph光子照射下的低频(LF)噪声谱。观察到漏极电压噪声和栅极电流噪声的低频噪声谱在照明过程中的变化，以及在照明结束后的前10分钟间隔内缓慢松弛到初始值。这些变化与工作参数(VDS, IDS和IGS)的时间依赖性变化有关，并根据位于AlGaN/GaN HEMT结构中的陷阱进行了讨论。

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Relaxation of low-frequency noise in AlGaN/GaN HEMTs

In this contribution we report on low-frequency (LF) noise spectra of aluminium gallium nitride / gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) subjected to the illumination by photons of energy Eph bellow the energy band gap Eg of GaN. Change of LF noise spectra of the drain voltage noise and the gate current noise during the illumination and its slow relaxation to initial value after the illumination termination during the first 10 minute interval have been observed. These changes were related to time dependent changes of operating parameters (VDS, IDS and IGS) and discussed in terms of the traps located in AlGaN/GaN HEMT structure.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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