原子层沉积法制备Al2O3薄膜的性能

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418575

K. Frohlich, M. Mičušík, E. Dobročka, P. Šiffalovič, F. Gucmann, J. Fedor

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引用次数: 1

摘要

在100℃和200℃下，采用等离子体增强原子层沉积法制备了Al2O3薄膜。每周期生长范围为0.108 ~ 0.139 nm/周期。用XPS对膜的组成进行了研究。在100℃下生长的薄膜中，碳杂质含量较高。在200°C下生长的膜有轻微的缺氧。低温生长的Al2O3薄膜在微电子领域具有广阔的应用前景。

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Properties of Al2O3 thin films grown by atomic layer deposition

Thin Al₂O₃ films were prepared by thermal and plasma enhanced atomic layer deposition at 100 and 200°C. Growth per cycle ranges from 0.108 to 0.139 nm/cycle. Composition of the films was investigated by XPS. Carbon impurity was higher for the films grown at 100°C. The films grown at 200°C were slightly oxygen deficient.The Al₂O₃ films grown at low temperatures have promising applications in microelectronics.

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来源期刊

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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