改变势垒层参数对GaN/AlGaN/GaN肖特基结构隧穿的影响

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418531

J. Racko, M. Mikolasek, R. Granzner, N. Al Mustafa, F. Schwierz, J. Breza

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引用次数: 2

摘要

我们设计并应用了一个新的陷阱辅助隧道模型来模拟GaN/AlGaN/GaN肖特基结构。研究了不同帽厚对总电流的影响。实验表明，在这种反向偏置肖特基结构中观察到的大电流具有隧穿性质，可以用我们的新模型来描述。

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The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures

We have designed and applied a new trap-assisted-tunnelling model to simulate GaN/AlGaN/GaN Schottky structures. The influence was investigated of a varied cap thickness on the overall current flow. It is shown that large currents experimentally observed in such a reverse biased Schottky structure have a tunnelling nature and can be described by our new model.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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