MQW GaInNAs/GaAs p-i-n光电探测器的研究

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418578

H. Khalil, N. Balkan, S. Mazzucato

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引用次数: 1

摘要

研究了工作波长为λ > 1.3 μm的稀氮基GaInNAs/GaAs多量子阱光电探测器在100 ~ 300K不同温度下的瞬态光电导率(TPC)、探测率(D)和噪声等效功率(NEP)。在此温度范围内，TPC上升时间从约2ns增加到4ns。PC衰变随两个时间常数呈指数衰减;与温度无关的快波约为5纳秒，随后是在T=100 K时200纳秒的慢波，在室温时为520纳秒。光电探测器的最大探测率为6.6×109cm√(Hz)/W，最小NEP为3.6×10-11W/√(Hz)，是一种速度较快、灵敏度较高的低噪声光电探测器。

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Investigation of MQW GaInNAs/GaAs p-i-n photodetector

Transient photoconductivity (TPC), detectivity (D), and noise-equivalent power (NEP) in a dilute nitride based GaInNAs/GaAs multiple quantum well photodetector operating at λ >;1.3 μm are investigated at different temperatures from 100 to 300K. In this temperature range the TPC rise time increases from around 2 ns to 4 ns. The decay PC decays exponentially with two time constants; the fast one of about 5 ns which is independent on temperature, is followed by a slower one of 200 ns at T=100 K, and 520 ns at room temperature. The maximum detectivity of the photodetector is 6.6×109cm√(Hz)/W and the minimum NEP is 3.6×10-11W/√(Hz), indicating a reasonably fast and sensitive low-noise photodetector.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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