The d-DotFET: MOSFET based on locally strained silicon

J. Gerharz, J. Moers, G. Mussler, D. Grutzmacher
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引用次数: 0

Abstract

In the d-DotFET device the strain introduced into a silicon capping layer grown on top of an ordered array of Ge islands is used. To achieve ordering and prevent randomly distribution of the Ge islands during epitaxial growth of Ge on silicon, template assisted self organization is utilized: the Si substrate is patterend by E-Beam lithography and subsequent reactive ion etching. During epitaxial growth by MBE the Ge islands grow in the predefined holes only, thus the position of the dots can be determined with a lateral accuracy of ±5 nm. This allows the alignment of the active device area to individual dots, thus utilizing the locally strained silicon layer. For MOSFETs were the dot will be preserved in the device, mobility enhancement of 22.5% can be achieved [1,2], while removing the dot leads to an mobility enhancement of 35%.
d-DotFET:基于局部应变硅的MOSFET
在d-DotFET器件中,将应变引入生长在有序Ge岛阵列顶部的硅盖层中。为了在锗在硅上外延生长过程中实现有序和防止锗岛的随机分布,利用模板辅助自组织:通过电子束光刻和随后的反应离子蚀刻在硅衬底上形成图案。在MBE外延生长过程中,锗岛仅在预定的孔中生长,因此可以以±5 nm的横向精度确定点的位置。这允许有源器件区域与单个点对齐,从而利用局部应变硅层。对于mosfet来说,如果将点保留在器件中,则可实现22.5%的迁移率增强[1,2],而去除点则可使迁移率增强35%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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