用于SPICE-like仿真的功率MOSFET 2/3-D电路电热模型

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418573

A. Chvála, D. Donoval, J. Marek, P. Pribytny, M. Molnar

{"title":"用于SPICE-like仿真的功率MOSFET 2/3-D电路电热模型","authors":"A. Chvála, D. Donoval, J. Marek, P. Pribytny, M. Molnar","doi":"10.1109/ASDAM.2012.6418573","DOIUrl":null,"url":null,"abstract":"New original SPICE-like simulation model for a power MOSFET based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a multi-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit SPICE-like simulations with distributed properties and 2-D thermal equivalent network is used for simulation of unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation\",\"authors\":\"A. Chvála, D. Donoval, J. Marek, P. Pribytny, M. Molnar\",\"doi\":\"10.1109/ASDAM.2012.6418573\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New original SPICE-like simulation model for a power MOSFET based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a multi-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit SPICE-like simulations with distributed properties and 2-D thermal equivalent network is used for simulation of unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented.\",\"PeriodicalId\":426709,\"journal\":{\"name\":\"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2012.6418573\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2012.6418573","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

提出了一种基于电学和热学特性交互耦合的功率MOSFET仿真模型。提出了多维热流的热等效网络。设计了具有分布式特性的电路类spice仿真的电热MOSFET模型和二维热等效网络，用于模拟非箝位电感开关(UIS)器件鲁棒性测试。分析并提出了新模型的特点和局限性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation

New original SPICE-like simulation model for a power MOSFET based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a multi-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit SPICE-like simulations with distributed properties and 2-D thermal equivalent network is used for simulation of unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

自引率

0.00%

发文量