Ti/Al基与AlGaN/GaN异质结构欧姆接触扩散势垒的研究

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418532

W. Macherzyński, B. Paszkiewicz

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引用次数: 2

摘要

我们在AlGaN/GaN异质结构上测试了各种欧姆接触金属化方案，以获得良好的表面形貌和适当的线边缘清晰度。Ti/Al/Ni/Au多层金属化中Ti、Ru、Pt和Mo阻挡层取代了中间Ni层。我们观察到所提出的方案在地形和线边缘定义方面存在显著差异。Ti/Al/Mo/Au接触面不仅具有良好的表面形貌，而且具有良好的线边缘清晰度。

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Development of diffusion barriers for Ti/Al based ohmic contact to AlGaN/GaN heterostructures

We tested various ohmic contact metallizations schemes on AlGaN/GaN heterostructures to achieve good surface topography and proper line edge definition. Ti, Ru, Pt and Mo barrier layers replaced the intermediate Ni layer in Ti/Al/Ni/Au multilayer metallization. We observed significant difference in proposed schemes topography and line edge definition. The Ti/Al/Mo/Au contact had not only good surface morphology but also proper line edge definition.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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