高温AlGaN/GaN HFET微波表征

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418562

M. Tomáška

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引用次数: 0

摘要

本文报道了AlGaN/GaN HEMT器件的高温片上微波表征装置。在室温至425℃的温度范围内，测量了直流输出特性以及微波参数fT和fmax，并以三维图表的形式显示。观察到温度对直流和微波性能有显著影响。

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High temperature AlGaN/GaN HFET microwave characterization

The paper reports high temperature on-wafer microwave characterization setup for AlGaN/GaN HEMT devices. DC output characteristics as well as microwave parameters fT and fmax were measured and visualized in the form of 3-D diagrams in the temperature range from room temperature up to 425°C. Significant influence of temperature on DC and microwave properties was observed.

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来源期刊

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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