High temperature AlGaN/GaN HFET microwave characterization

Abstract

The paper reports high temperature on-wafer microwave characterization setup for AlGaN/GaN HEMT devices. DC output characteristics as well as microwave parameters fT and fmax were measured and visualized in the form of 3-D diagrams in the temperature range from room temperature up to 425°C. Significant influence of temperature on DC and microwave properties was observed.