The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems最新文献_第6页

Characterization and control of insulated gates for GaN power switching transistors 氮化镓功率开关晶体管绝缘栅极的特性与控制

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418561

T. Hashizume

引用次数: 1

Influence of the MOVPE growth parameters on the properties of InGaAsN/GaAs MQW structures for solar cells application MOVPE生长参数对InGaAsN/GaAs MQW结构性能的影响

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418585

D. Radziewicz, B. Ściana, D. Pucicki, J. Serafińczuk, M. Tlaczala, M. Latkowska, M. Florovič, J. Kováč

引用次数: 1

2D irregular structure patterning and analysis of LED by NSOM LED二维不规则结构的NSOM成像与分析

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418576

D. Pudiš, I. Kubicová, J. Škriniarová, J. Kovač, J. Jakabovic, J. Novák, L. Suslik, S. Hascik

引用次数: 0

Nanostructures for plasmonic solar cells and biosensing 等离子体太阳能电池的纳米结构与生物传感

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418550

C. Wu

引用次数: 0

Estimation of exposure parameters of chosen e-beam resists using variable shaped e-beam pattern generator 利用可变形状电子束图发生器估计选定电子束电阻的暴露参数

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418541

R. Andok, L. Matay, I. Kostic, A. Benčurová, P. Nemec, A. Konečníková, A. Ritomský

引用次数: 2

Distribution of fixed oxide charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements 通过电容测量研究了ALD生长Al2O3的MOS结构中固定氧化物电荷的分布

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418526

L. Válik, M. Ťapajna, F. Gucmann, J. Fedor, P. Šiffalovič, K. Frohlich

{"title":"Distribution of fixed oxide charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements","authors":"L. Válik, M. Ťapajna, F. Gucmann, J. Fedor, P. Šiffalovič, K. Frohlich","doi":"10.1109/ASDAM.2012.6418526","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418526","url":null,"abstract":"We analyze the fixed oxide charge in Al2O3 grown by thermal and plasma enhanced ALD at 100 and 200 °C using capacitance-voltage measurements on MOS structures with different Al2O3 thickness. For both ALD techniques and deposition temperatures, Al2O3 shows negative fixed oxide charge with density in the range of 2-7×1012 cm-2, most likely located at the Al2O3/SiO2 interface as inferred from the linear dependence of flat-band voltage on Al2O3 thickness. The break-down field ranges from 4 to 8 MV/cm illustrating a high quality of the Al2O3 layers. Post-deposition annealing was found to stabilize the Al2O3 dielectric constant determined to be similar to 9. Control of the negative Al2O3 fixed charge represents a promising way to e.g. enhance the threshold voltage shift of GaN based MOS heterostructure FETs towards normally-off operation.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132731743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET 硅倍半氧烷氢作为SiC石墨烯场效应管的栅极介电层

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418520

J. Nahlik, M. Janoušek, Z. Šobáň, J. Voves, V. Jurka, P. Machac

{"title":"Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET","authors":"J. Nahlik, M. Janoušek, Z. Šobáň, J. Voves, V. Jurka, P. Machac","doi":"10.1109/ASDAM.2012.6418520","DOIUrl":"https://doi.org/10.1109/ASDAM.2012.6418520","url":null,"abstract":"Graphene can be prepared by annealing of SiC wafer. That allows large scale patterning by standard UV photolithography. Unfortunately SiC substrate does not allow backgating in contrast to graphene on silicon substrate (with thin silicon dioxide layer). The major challenge is to find suitable dielectric layer that can be used for electrostatic gating without significant influence on carrier mobility or another properties of graphene. We examined electrical behavior of electron exposed hydrogen silsesquioxane (HSQ) layer used as dielectric layer of topgated SiC graphene. We prepared seven sets of capacitor structures for test of HSQ layer electrical properties. The capacitors have different dimensions (100x5 - 100x100 μm) and each set had different exposure energy (12 - 480μC/cm2) and annealing process. Electrodes and contacts were prepared by evaporation of 3/30 nm thick Cr/Au layer. The influence of exposure energy to electrical properties of HSQ layer was observed. The dimension of capacitor structures had lower effect than exposure energy. The gated Hall-bar structure of SiC graphene will be prepared subsequently. Hall-bar will be defined by e-beam lithography, etched by oxygen plasma and contacted by evaporation. HSQ will be used as a gate dielectric.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132175643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Current instabilities and other reliability aspects in AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide 原子层沉积Al2O3作为栅氧化物的AlGaN/GaN mos - hfet的电流不稳定性和其他可靠性方面

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418560

R. Stoklas, D. Gregušová, J. Novák, P. Kordos, M. Tajima, T. Hashizume

引用次数: 0

Photocathode based on deuterated diamond like carbon films prepared by reactive magnetron sputtering and PECVD technology 反应磁控溅射和PECVD技术制备的氘化类金刚石薄膜光电阴极

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418517

J. Huran, N. Balalykin, M. Kadlecíková, B. Zat’ko, A. A. Feschenko, A. Kobzev, Ľ. Vančo, M. Nozdrin, A. Kleinová, E. Kováčová

引用次数: 1

Influence of layer structure on electrical properties of AlGaN/GaN HEMTs 层结构对AlGaN/GaN hemt电性能的影响

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI: 10.1109/ASDAM.2012.6418559

P. Benko, J. Kovác, A. Chvála, M. Florovič, P. Kordos, J. Škriniarová, L. Harmatha

引用次数: 1