GaN-based电子

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418587

M. Kuzuhara

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引用次数: 1

摘要

本文对三氮异质结FET技术进行了综述。介绍了高压环境下hemt的结构参数设计，包括各种场极板参数。对于低漏操作，未来的HEMT技术在独立GaN衬底上提出。一些理论设计问题也将被解决。

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GaN-based electronics

An overview of III-nitride heterojunction FET technologies is given in this paper. Structural parameter designs of HEMTs, including various field-plate parameters, are described for high-voltage applications. For low-leakage operation, future HEMT technology on a free-standing GaN substrate is presented. Some of the theoretical design issues will be also addressed.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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