异质外延生长中多孔缓冲层内的应变调节

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Pub Date : 2012-11-01 DOI:10.1109/ASDAM.2012.6418524

J. Grym, D. Nohavica, P. Gladkov, J. Vanis, E. Hulicius, J. Pangrác, O. Pacherova, K. Piksová

{"title":"异质外延生长中多孔缓冲层内的应变调节","authors":"J. Grym, D. Nohavica, P. Gladkov, J. Vanis, E. Hulicius, J. Pangrác, O. Pacherova, K. Piksová","doi":"10.1109/ASDAM.2012.6418524","DOIUrl":null,"url":null,"abstract":"We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1-x)As layers.","PeriodicalId":426709,"journal":{"name":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Strain accommodation within porous buffer layers in heteroepitaxial growth\",\"authors\":\"J. Grym, D. Nohavica, P. Gladkov, J. Vanis, E. Hulicius, J. Pangrác, O. Pacherova, K. Piksová\",\"doi\":\"10.1109/ASDAM.2012.6418524\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1-x)As layers.\",\"PeriodicalId\":426709,\"journal\":{\"name\":\"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2012.6418524\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2012.6418524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

本文报道了砷化镓多孔衬底的电化学制备、富砷环境下的热处理以及金属有机气相外延(MOVPE)的过度生长。目标是证明多孔衬底能够在具有高度晶格不匹配的In(x)Ga(1-x)As层的界面处容纳应变。

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Strain accommodation within porous buffer layers in heteroepitaxial growth

We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1-x)As layers.

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The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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