27th European Solid-State Device Research Conference最新文献_第8页

Thermal resistance modelling of RF high power bipolar transistors 射频大功率双极晶体管的热阻建模

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194396

K. Mouthaan, R. Tinti, A. Arno, H. de Graaff, J. Tauritz, J. Slotboom

{"title":"Thermal resistance modelling of RF high power bipolar transistors","authors":"K. Mouthaan, R. Tinti, A. Arno, H. de Graaff, J. Tauritz, J. Slotboom","doi":"10.1109/ESSDERC.1997.194396","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194396","url":null,"abstract":"Thermal modelling of RF high power bipolar transistors including the ther mal resistance of the silicon die and the beryllium oxide package as well as the temperature dependence of their thermal conductivities is considered To model power transistors the non linear heat conduction equation is con verted to a linear heat equation using Kirchho s transformation The linear problem is solved using a Green s function method and the Kirchho transformation is e ectuated via a non linear voltage transformation Introduction RF high power transistors are used in base stations for mobile radio radar and satellite com munications to amplify signals to a power level of a few Watts or more Basically these devices consist of a package one or more matching capacitances bonding wires and a silicon die The silicon Si die has a number of active areas and each active area has a number of base and emitter ngers The accurate modelling of the thermal behaviour is of particular relevance since the tem perature in uences the electrical behaviour of the transistor and plays an important role in determining the safe operating area SOA of the device Several methods such as the Finite Element Method FEM and the Finite Di erence Time Domain method FDTD can be used to calculate the temperature at the junction of the devices These methods easily incorporate the temperature dependence of the thermal conduc tivity of the materials involved Simulation times however can be in the order of minutes or hours for the accurate modelling of practical problems Dramatic time savings can be achieved when Green s function methods are employed A principal drawback of this approach is that it fails to incorporate the temperature dependence of the thermal conductivity so that the method is limited to linear problems In this work a robust and e cient implementation of a method for calculating the temper ature distribution and the thermal resistance matrix in Hewlett Packard s Microwave Design System MDS is demonstrated The method is based on proper splitting of the thermal prob lem in a linear problem solved using a Green s function method followed by a non linear Kirchho transformation This division is advantageous in that we obviate the need to recom pute the thermal matrix at every simulation point as is done for example in Simulation times for practical problems are in the order of seconds making the method amendable to CAD applications Computation of the thermal resistance matrix In the thermal model the Si die is placed on top of the beryllium oxide BeO substrate of the package as illustrated in gure The BeO substrate is on top of the mounting base which is maintained at a constant reference temperature Junctions are located in the active areas just below the surface of the Si die where heat is generated due to power dissipation","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123591513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A new numerical method for determining the excess noise power spectrum in MOSFETs 一种新的确定mosfet中过量噪声功率谱的数值方法

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194432

E. Gatti, A. Longoni, G. de Geronimo, Angelo Geraci

引用次数: 1

Statisitcal Analysis for IC-Management 集成电路管理的统计分析

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194391

V. Axelrad, J. Kibarian

引用次数: 0

Thinning Oxide-Nitride-Oxide Interpoly Dielectric (11-13nm) for 0.25 um Flash Cell Memories 用于0.25 um闪存的氧化氮氧化物插补电介质(11-13nm)减薄

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194416

P. Candelier, B. De Salvo, F. Martin, B. Guillaumot, F. Mondon, G. Reimbold

引用次数: 5

Stategic Alliances for highly efficient 300 mm Waferfabs 高效300毫米晶圆片战略联盟

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194390

J. Giessmann

{"title":"Stategic Alliances for highly efficient 300 mm Waferfabs","authors":"J. Giessmann","doi":"10.1109/ESSDERC.1997.194390","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194390","url":null,"abstract":"State-of-the-Art waferfabs require a growing demand for integrated and highly efficient system solutions in terms of investment costs, running costs and yield improvement. It will be explained which factors are determinant to the profitability of a waferfab. Making the change from 200 mm to 300 mm wafers together with the jump to 0.25 μm technology will be the challenge the entire semiconductor industry within the coming years. The author explains why the jump to 300 mm is so critical in terms of technology and efficiency. The investment costs which are necessary to cope with the 300 mm challenge are more than any single company can handle. This is why strategic alliances have to be founded. The impacts are obvious: Systems or turnkey supplier to the semiconductor industry have to contribute as well as the chipmanufacturers to ease the burden of huge investment costs. 1. Growing Demands of the Industry in Terms of Investment Costs, Running Costs and Yield Improvement Investment costs as well as running costs of a fab increase tremendously. See fig. 1. Fig. 1 IC Facility Costs Page 1/7 2. The 300 mm Transition At Semicon/Japan 1995 the world s IC-producing nations agreed that 300 mm should be the next generation of silicon wafer size. At that time the production of these larger diameter wafers was expected to start in 1998. The conversion to 300 mm wafers is expected to lead to a significant reduction in manufacturing costs, improve yields and enable other productivity improvements. Regarding to six major factors the start up for production in 1998 seems to be too optimistic: Larger development times, extended wafer life cycles, market situation, materials shortages, technical obstacles and funding issues. The transitions to 150 mm and 200 mm respectively were funded in both cases by one single company. Regarding to the increased huge investment and developing costs no single company is willing and able to pay for the transition. The development time for a new wafer generation has increased significantly (see fig. 2). Fig.2. Wafer Development Time It has been estimated that it will cost the global semiconductor industry and its suppliers as much as US$ 14 billion to develop a 300 mm capability by the end of the decade. So, why is the industry making such an enormous effort ? The transition into 300 mm technology is merely driven by economics. The number of dies per wafer will increase by the factor 2,4 to 2,7. Big logic devices require bigger wafer diameter and thus increase die per wafer efficiency. See fig.3. For large CPU chips with 5 to 10 M transistors the efficiency on 300 mm wafers is higher. See fig.3. The cost per die is expected to be 25 40 % lower. Finally there are fewer fabs necessary to be built to meet the demand for chips. The 300 mm transition is going to increase investment costs and running costs for waferfabs. On the other hand, chip productivity increases with respect to the wafersizes.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129805359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Limitations of Double Polysilicon Self-Aligned Bipolar Transistor Structure 双多晶硅自对准双极晶体管结构的局限性

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194482

K. Inoh, H. Nii, S. Yoshitomi, C. Yoshino, H. Furuya, H. Nakajima, H. Sugaya, H. Naruse, Y. Katsumata

引用次数: 4

Finite Element Analysis of Stress Distributions in Interconnect Structures 互连结构应力分布的有限元分析

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194463

J. Coughlan, S. Foley, Alan Mathewson

引用次数: 2

A Novel Functional Heterostructure-Emitter and Hereostructure-Base Transistor (HEHBT) 一种新型功能异质结构发射极和异质结构基晶体管(HEHBT)

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194529

W. Liu, J. Tsai, S. Cheng, Po-Hung Lin, W.C. Wang, J.Y. Chen

引用次数: 0

Comparison of an L-array and a single transistor method to extract Leff and Rs in deep submicron MOSFETs 深亚微米mosfet中l阵列和单晶体管提取Leff和Rs的比较

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194515

S. Biesemans, K. De Meyer

引用次数: 1

Reexamination of Electron Mobility Dependence on Dopants in GaAs 重新审视砷化镓中电子迁移率对掺杂剂的依赖性

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194426

Christoph Kopf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr

引用次数: 7