E. Gatti, A. Longoni, G. de Geronimo, Angelo Geraci
{"title":"一种新的确定mosfet中过量噪声功率谱的数值方法","authors":"E. Gatti, A. Longoni, G. de Geronimo, Angelo Geraci","doi":"10.1109/ESSDERC.1997.194432","DOIUrl":null,"url":null,"abstract":"This work deals with the evaluation of the low frequency noise spectrum associated to the random capture and release of carriers by localized traps in MOSFETs. The proposed numerical method, based on the linearization of the semiconductor device equations, is applicable in any biasing condition and for any position and activation energy of the traps inside the device. The experimental validation of the procedure has been performed and first results are here presented.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A new numerical method for determining the excess noise power spectrum in MOSFETs\",\"authors\":\"E. Gatti, A. Longoni, G. de Geronimo, Angelo Geraci\",\"doi\":\"10.1109/ESSDERC.1997.194432\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work deals with the evaluation of the low frequency noise spectrum associated to the random capture and release of carriers by localized traps in MOSFETs. The proposed numerical method, based on the linearization of the semiconductor device equations, is applicable in any biasing condition and for any position and activation energy of the traps inside the device. The experimental validation of the procedure has been performed and first results are here presented.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194432\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new numerical method for determining the excess noise power spectrum in MOSFETs
This work deals with the evaluation of the low frequency noise spectrum associated to the random capture and release of carriers by localized traps in MOSFETs. The proposed numerical method, based on the linearization of the semiconductor device equations, is applicable in any biasing condition and for any position and activation energy of the traps inside the device. The experimental validation of the procedure has been performed and first results are here presented.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
