Christoph Kopf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr
{"title":"重新审视砷化镓中电子迁移率对掺杂剂的依赖性","authors":"Christoph Kopf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr","doi":"10.1109/ESSDERC.1997.194426","DOIUrl":null,"url":null,"abstract":"The influence of dopant species on electron mobility in GaAs is investigated. Based on Thomas-Fermi theory to describe the charge density of the individual impurity ion we derive an analytical expression for the scattering rate. Employing these results in a Monte Carlo calculation we fi nda signifi cantdependence of mobility on donor species for concentrations beyond cm . With increasing concentration an increasing difference is observed, ions with larger atomic number lead to lower mobility values. In case of minority electron mobility no signifi cantdopant dependence is predicted.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"148 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Reexamination of Electron Mobility Dependence on Dopants in GaAs\",\"authors\":\"Christoph Kopf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr\",\"doi\":\"10.1109/ESSDERC.1997.194426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of dopant species on electron mobility in GaAs is investigated. Based on Thomas-Fermi theory to describe the charge density of the individual impurity ion we derive an analytical expression for the scattering rate. Employing these results in a Monte Carlo calculation we fi nda signifi cantdependence of mobility on donor species for concentrations beyond cm . With increasing concentration an increasing difference is observed, ions with larger atomic number lead to lower mobility values. In case of minority electron mobility no signifi cantdopant dependence is predicted.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"148 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194426\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194426","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
摘要
我们研究了掺杂物对砷化镓中电子迁移率的影响。根据描述单个杂质离子电荷密度的托马斯-费米理论，我们得出了散射率的分析表达式。将这些结果应用于蒙特卡罗计算，我们发现当浓度超过 cm 时，电子迁移率与供体种类之间存在显著的依赖关系。随着浓度的增加，两者之间的差异越来越大，原子序数越大的离子，其迁移率值越低。在少数电子迁移率方面，我们预测迁移率与掺杂剂的关系并不明显。
Reexamination of Electron Mobility Dependence on Dopants in GaAs
The influence of dopant species on electron mobility in GaAs is investigated. Based on Thomas-Fermi theory to describe the charge density of the individual impurity ion we derive an analytical expression for the scattering rate. Employing these results in a Monte Carlo calculation we fi nda signifi cantdependence of mobility on donor species for concentrations beyond cm . With increasing concentration an increasing difference is observed, ions with larger atomic number lead to lower mobility values. In case of minority electron mobility no signifi cantdopant dependence is predicted.
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