P. Candelier, B. De Salvo, F. Martin, B. Guillaumot, F. Mondon, G. Reimbold
{"title":"用于0.25 um闪存的氧化氮氧化物插补电介质(11-13nm)减薄","authors":"P. Candelier, B. De Salvo, F. Martin, B. Guillaumot, F. Mondon, G. Reimbold","doi":"10.1109/ESSDERC.1997.194416","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Thinning Oxide-Nitride-Oxide Interpoly Dielectric (11-13nm) for 0.25 um Flash Cell Memories\",\"authors\":\"P. Candelier, B. De Salvo, F. Martin, B. Guillaumot, F. Mondon, G. Reimbold\",\"doi\":\"10.1109/ESSDERC.1997.194416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194416\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}