2010 IEEE Nanotechnology Materials and Devices Conference最新文献

{"title":"Comparative study of C-V characteristics in Si-NWFET and MOSFET","authors":"Y. Jeong, R. Baek, C. Baek, K. Yeo, Dong-Won Kim, Jinyong Chung, D. Kim","doi":"10.1109/NMDC.2010.5651942","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651942","url":null,"abstract":"In this paper, we report the C-V characteristics measured from nanowire capacitor (NWCAP), which has been fabricated by connecting in parallel a large number of identically processed nanowire FETs. By using the C-V data from nanowire devices, we examined the gate voltage response of undoped floating channel. Furthermore, the bias independent overlap capacitance and bias dependent fringing capacitance associated with 1D channel contacting 3D Source/ Drain are extracted. The measured capacitance data are compared with the planar MOS capacitor (MOSCAP) data.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125121609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling of switching response of small diameter nanowire field effect transistors","authors":"S. P. Morusupalli, A. Verma, S. Basavaraju, A. Buin, R. Nekovei","doi":"10.1109/NMDC.2010.5652474","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652474","url":null,"abstract":"We report on a comprehensive modeling of small diameter (< 4 nm) nanowire field effect transistors as switches. The SPICE simulation of the transistor takes data from device and material simulations, and therefore allows for significant flexibility in tool development for nano-devices and circuits. Device simulations involve solving self-consistently the drift-diffusion equation, with Gauss Law in integral form for the electrostatics of the device structure.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125206707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of substrate crystallinity on growth and optical properties of InP nanowires","authors":"A. Lohn, N. Kobayashi","doi":"10.1109/NMDC.2010.5652543","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652543","url":null,"abstract":"Growth mechanisms and optical properties of indium phosphide nanowires were investigated on various material surfaces. InP nanowires were grown on three types of substrate surfaces; Si, GaAs and a hydrogenated silicon template layer prepared on a quartz substrate, by metalorganic chemical vapor deposition. The role of substrate in nanowire growth mechanisms and optical properties is addressed.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121919430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improvement of reliability characteristics using the N2 implantation in SOHOS flash memory","authors":"J. Park, J. Oh, Seung-Dong Yang, K. Jeong, Yu-Mi Kim, H. Yun, H. Lee, Ga-Won Lee","doi":"10.1109/NMDC.2010.5652151","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652151","url":null,"abstract":"In this paper, device performance and reliability characteristics are investigated and discussed in Fin-type SONOS and SOHOS flash memory device. We also proposed the N2 implantation method for improvement of reliability characteristics in SOHOS flash memory device. It shows that data retention characteristic in N2 implantation SOHOS device is improved due to the nitrogen induced-deep traps, while its P/E speed is degraded by additional nitrogen in high-k trapping layer.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123827753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Outstanding performance of a nanofilm microstrip antenna","authors":"F. Urbani, D. Stollberg, A. Verma","doi":"10.1109/NMDC.2010.5649613","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5649613","url":null,"abstract":"We report on the fabrication of a microstrip antenna with an ultra-thin Iron film patch with thickness of approximately 10 nm. The antenna showed excellent response in terms of performance and reliability. In addition, the antenna demonstrated potential for ultra-wide band applications. Such antennas may therefore have significant promise for system-on-chip, space application, and other specialized applications.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131569258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoluminescence of polycrystalline ZnO nanofibers deposited by e-spinning","authors":"B. Sen, M. Stroscio, M. Dutta","doi":"10.1109/NMDC.2010.5652127","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652127","url":null,"abstract":"The morphological and optical characteristics of polycrystalline ZnO nanofibers (~ 100 nm thick) deposited by e-spinning have been studied. Photoluminescence spectra show a near UV peak corresponding to the band edge emission and a broad peak in the visible region possibly from the surface states. The temperature dependent photoluminescence spectroscopy reveals different carrier recombination dominant at low temperature.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"21 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131638609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling and simulation of organic solar cells","authors":"Liming Liu, Guangyong Li","doi":"10.1109/NMDC.2010.5649633","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5649633","url":null,"abstract":"We present our investigation of organic solar cells by modeling and simulation after numerically solving Poisson and continuity equations that describe the electric property of semiconductors. Specifically, simulations reveal that Langevin type recombination, which describes the loss mechanism in pristine materials with low mobility, is not proper to predict the performance of BHJ organic solar cells and will lead counterintuitive simulation results. Then, the recombination mechanism has been studied in bulk heterojunction (BHJ) organic solar cells by simulating intensity-dependent current-voltage (J-V) measurements. The simulation results indicate that primary loss mechanism is monomolecular recombination. Moreover, the unbalanced carrier transport in organic solar cells is explored and the simulation suggests that increasing hole mobility is an effective method to improve the performance of organic solar cells.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134254905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An analysis of eco-efficiency diffusion policy programs implementation in Japan: A case study of two European programs enhancing SMEs through environmental approaches","authors":"S. Furukawa, N. Odake","doi":"10.1109/NMDC.2010.5652295","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652295","url":null,"abstract":"As interests in the impacts of business activities on environment have been growing, environmental policy is now shifting from the “end of pipe” stage to the next stage, “cleaner production”, which factor in the life cycles, and social efficiency. Since the early 90's, the concept of cleaner production has been recognized and promoted. An increasing trend in environmental departments of state and municipal governments in Europe is that these departments have outgrown their restriction-based environmental measures, which was originally to regulate pollution. Their concept of environmental policy has shifted to management support programs that helps small and medium-sized enterprises (SMEs) increase their competitiveness through improving their environmental efficiency. This paper discusses and analyzes the two environmental policy programs; the case of PIUS-Check, developed and implemented by die Effizienz Agentur NRW in the state of North Rhine-Westphalia, Germany and the case of ÖKOPROFIT, developed and implemented in the city of Graz, Austria. Features of the programs and social context that nurtured the programs are discussed, compared and analyzed. Then this paper examines a case study of programs transfer to Tokai Region of Japan. The method employed is participatory action research in which one of the authors participated in the process of programs transfer, as a consultant and project coordinator. The goal of this paper is to extract the conveyed meanings of partnerships and the role of public sectors through the activities of local intermediaries such as agents need to play in diffusing eco-efficiency to SMEs. The findings of the case study include that the intermediaries of the policy programs implementation and diffusion functions as the engines of innovation; innovation of such eco-efficiency diffusion program, and eco-efficiency innovation at participating SMEs. Barriers to European environmental policy programs transfer to Japan, including policy administration structure are discussed.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131802109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of readout system for carbon nanotube based infrared detector","authors":"Liangliang Chen, N. Xi, Hongzhi Chen, K. Lai","doi":"10.1109/NMDC.2010.5651900","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651900","url":null,"abstract":"The emergence of carbon nanotube (CNT) based infrared (IR) detectors has welcomed new opportunities for IR detection for both military and civil applications. This led to research and development of high resolution CNT based IR imaging systems. In this paper, a differential input charge integrator current amplifier was designed to read the photocurrent of CNT based IR detectors. Also, all parts, including readout chip (ROIC), data acquisition card (DAQ card) and PC display, were discussed. With this technology, CNT based IR detector worked in zero bias by the differential input. Meanwhile, experiment tests on the CNT based IR sensors have shown that the least current being detected can reach to 20 pA in this readout system.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132138127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nano-injection system based on nanorobotic manipulations inside hybrid microscope","authors":"M. Nakajima, T. Hirano, M. Kojima, N. Hisamoto, M. Homma, T. Fukuda","doi":"10.1109/NMDC.2010.5652319","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652319","url":null,"abstract":"This paper presents a novel nano-injection system based on nanorobotic manipulation inside hybrid microscope, which is combined with optical and environmental-scanning electron microscope (E-SEM). The hybrid microscope is designed to combine the optical microscope (OM) and E-SEM to realize biological specimen analysis by optical microscope image including fluorescent imaging, and nano-scale manipulation by E-SEM imaging. In this paper, we propose the nano-injection method based on nanorobotic manipulation inside the hybrid microscope. The nanoprobe has a sharp tip to insert the probe into biological sample. The probe is fabricated by focused ion beam (FIB) process. The Caenorhabditis elegans (C. elegans) is used as model organism to analysis various diseases in precisely and shot time. The nanoinjection technique is needed to transport fluorescent materials or specific biological organism into specific cell as in-vivo experiment. The proposed system is considered to be important as future nano-surgery system for life innovation using model organism.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132959539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}