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Evaluation of three-dimensional measurement method based on phase shifting methods 基于相移法的三维测量方法评价
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652342
Tsukasa Kato, R. Taguchi, T. Umezaki, M. Hayashi, M. Hoguro
{"title":"Evaluation of three-dimensional measurement method based on phase shifting methods","authors":"Tsukasa Kato, R. Taguchi, T. Umezaki, M. Hayashi, M. Hoguro","doi":"10.1109/NMDC.2010.5652342","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652342","url":null,"abstract":"We have developed three-dimensional shape measurement system. It is able to be used as security systems which protect properties and lives of people. This system uses phase shifting method measuring three-dimensional shapes. The traditional phase shifting method requires projecting several patterns on a target, and it needs high processing cost to solve phase unwrapping problems. So the traditional phase shifting method is hard to work in real time. Our method projects only one pattern on a target and needs low processing cost.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129133835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single-electron memory based on floating-gated carbon nanotube field-effect transistors 基于浮动门控碳纳米管场效应晶体管的单电子存储器
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652573
T. Ohori, Y. Ohno, K. Maehashi, Koichi Inoue, K. Matsumoto
{"title":"Single-electron memory based on floating-gated carbon nanotube field-effect transistors","authors":"T. Ohori, Y. Ohno, K. Maehashi, Koichi Inoue, K. Matsumoto","doi":"10.1109/NMDC.2010.5652573","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652573","url":null,"abstract":"We have fabricated floating-gated carbon nanotube field-effect transistors (CNTFETs). Au floating dots in the device are expected to act as charge storage nodes. The fabricated floating-gated CNTFETs clearly exhibited memory effect. Furthermore, single-electron memory was demonstrated based on floating-gated CNTFETs. Quantized shifts in the threshold voltage as a function of charging voltage and retention time were clearly observed. The quantized characteristics are attributed to the effect of single hole charging in the Au floating dots.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121439036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-heating in SOI nano devices SOI纳米器件的自加热
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5649608
D. Vasileska
{"title":"Self-heating in SOI nano devices","authors":"D. Vasileska","doi":"10.1109/NMDC.2010.5649608","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5649608","url":null,"abstract":"State of the art 2D and 3D electro-thermal particle-based device simulators have been developed to investigate degradation in the on-current due to self-heating effects in fully-depleted SOI devices and nanowire transistors. For the fully-depleted SOI devices in which we have thin silicon slabs temperature and thickness dependent expression for the thermal conductivity data that agrees perfectly with Asheghi and co-workers experimental data is derived and implemented in the code. Regarding the thermal conductivity of the nanowire transistor, the experimental data of Li Shi and co-workers are used. We find that velocity saturation effect in both fully-depleted SOI and nanowire transistors is the main reason for the observation of smaller degradation due to self-heating effects. For the case of FD SOI devices, we find that crystallographic orientation plays role on the amount of current degradation. For the case of the nanowire transistors, we find that placement of contacts significantly affects the current degradation.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127459323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The memristor as controller 忆阻器作为控制器
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5649573
A. Delgado
{"title":"The memristor as controller","authors":"A. Delgado","doi":"10.1109/NMDC.2010.5649573","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5649573","url":null,"abstract":"Recently a fourth circuit element, predicted four decades ago, has been discovered by HP researchers. This device, known as the memristor, is basically a resistance with memory that can be used as a tunable gain in control systems. In this paper the memristor experimental characteristic is modeled with a describing function and used to predict oscillations in closed loop systems with linear plants.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116885837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
In situ electrical property characterization of individual nanostructures using a sliding probe inside a transmission electron microscope 利用透射电子显微镜内的滑动探针对单个纳米结构进行原位电学特性表征
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652591
Zheng Fan, X. Tao, Yiping Li, Yingchao Yang, Jun Du, Wenkui Zhang, Hui Huang, Y. Gan, Xiaodong Li, Lixin Dong
{"title":"In situ electrical property characterization of individual nanostructures using a sliding probe inside a transmission electron microscope","authors":"Zheng Fan, X. Tao, Yiping Li, Yingchao Yang, Jun Du, Wenkui Zhang, Hui Huang, Y. Gan, Xiaodong Li, Lixin Dong","doi":"10.1109/NMDC.2010.5652591","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652591","url":null,"abstract":"A sliding probe technique has been developed for the in situ electrical property characterization of individual nanostructures inside a transmission electron microscope (TEM) using a nanomanipulator. Experimental investigation into the transport measurement of copper-filled carbon nanotubes, carbide nanowires, and carbon microfiber has shown the effectiveness of this method. Comparing with conventional 4-point methods, the proposed setup is simple and agile and it can be readily combined with TEM-based imaging and analysis. Comparing with conventional 2-point methods, the sliding probe method are characterized by (1) the contact resistance can be partially eliminated and (2) sectional measurement using this method is particularly adaptable to non-uniform structures or hetero-structures.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114056388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The current status and issues for Photovoltaic power generation — SME approach 光伏发电的现状与问题——中小企业途径
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5651870
M. Sudo, N. Odake
{"title":"The current status and issues for Photovoltaic power generation — SME approach","authors":"M. Sudo, N. Odake","doi":"10.1109/NMDC.2010.5651870","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651870","url":null,"abstract":"In this study, current conditions and problems faced by SME in the Photovoltaic business will be studied and clarified. The PV selling production volume has been increasing rapidly at a rate of 140–150% since 2000. This is not only due to the technological progress in photovoltaic cell device and innovation in manufacturing technologies, but also due to the government support for the same. One of the regional trends in PV business is the role played by installation contractors due to troubles relating to leaking roof and damage of building material. Installation work is mainly categorized into two types. One is related to the work on the roof and the other relates to electrical installation. Cooperation between both is indispensable and roles of system integrator is critical for the smooth implementation of the system.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114564418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Synthesis and characterization of Eosin Y functionalized MWCNT 伊红Y功能化纳米碳纳米管的合成与表征
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652428
Ping-Hei Chen, Hung-Hsia Chen, R. Anbarasan, L. Kuo
{"title":"Synthesis and characterization of Eosin Y functionalized MWCNT","authors":"Ping-Hei Chen, Hung-Hsia Chen, R. Anbarasan, L. Kuo","doi":"10.1109/NMDC.2010.5652428","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652428","url":null,"abstract":"Recently, the materials scientists invented that the dye functionalized MWCNT found applications in photodynamic therapy, due to the apoptosis of targeted cancer cells by the coupled effect of photothermal as well as photodynamic effects. By grouping these ideas, a new type of material was synthesized. In the present investigation, Eosin Y, a xanthenes type dye was functionalized with MWCNT via ethylene diamine (EDA) as a coupling agent. The Eosin Y functionalized MWCNT was characterized by the Fourier transform infrared (FTIR) spectroscopy, UV-Visible spectroscopy, photoluminescence (PL) spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114860497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Nanometer positioning of single quantum dots by flow control 基于流量控制的单量子点纳米定位
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652515
C. Ropp, R. Probst, Z. Cummins, Rakesh Kumar, S. Raghavan, E. Waks, B. Shapiro
{"title":"Nanometer positioning of single quantum dots by flow control","authors":"C. Ropp, R. Probst, Z. Cummins, Rakesh Kumar, S. Raghavan, E. Waks, B. Shapiro","doi":"10.1109/NMDC.2010.5652515","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652515","url":null,"abstract":"We present a method to individually position single QDs with nanometer precision by electroosmotic flow control (EOFC). Using EOFC, we demonstrate the ability to individually select a QD from anywhere within a 100 µm control area inside a microfluidic chamber and place it at a desired position to with a 52 nm precision. The single photon emission of EOFC manipulated QDs is verified by photon anti-bunching. These results demonstrate, for the first time, the ability to position single QDs to nanometer position accuracy in a microflu-idic environment. Such capability opens up the possibility for controllable placement of QDs in nanophotonic structures for the development of complex quantum devices, as well as in situ study of QDs for biological and sensing applications.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127713024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A second order impedance-based model for the resonance wavelength of a nanoegg 纳米蛋共振波长的二阶阻抗模型
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652079
S. Smaili, Y. Massoud
{"title":"A second order impedance-based model for the resonance wavelength of a nanoegg","authors":"S. Smaili, Y. Massoud","doi":"10.1109/NMDC.2010.5652079","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652079","url":null,"abstract":"Modeling nanostructures using circuit components have been useful in the enhancement of the design process of nanostructures. Given the use of nanoparticles in a wide range of applications, it becomes important to establish efficient models that can capture the properties of nanoparticles efficiently and accurately. Asymmetrical nanoparticles are more complex to model due to the symmetry breaking involved in these particles. In this paper, we present an impedance model for nanoeggs, which are one of the widely used asymmetric nanoparticles. The impedance model captures the effect of asymmetry on the resonance wavelength of the particles and can be used in the design of structures based on these particles.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122901727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Shaping the nanostructures from electromigration-based deposition 基于电迁移沉积的纳米结构塑造
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5651936
Zheng Fan, X. Tao, X. Cui, Xudong Fan, Xiaobin Zhang, Lixin Dong
{"title":"Shaping the nanostructures from electromigration-based deposition","authors":"Zheng Fan, X. Tao, X. Cui, Xudong Fan, Xiaobin Zhang, Lixin Dong","doi":"10.1109/NMDC.2010.5651936","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651936","url":null,"abstract":"Electromigration-based deposition (EMBD) is proposed for the fabrication of three-dimensional (3D) metallic nanostructures. The process is based on nanofluidic mass delivery at the attogram scale from metal-filled carbon nanotubes (m@CNTs) using nanorobotic manipulation inside a transmission electron microscope. By attaching a conductive probe to the sidewall of the CNT, it has been shown that mass flow can be achieved regardless the conductivity of the object surface. Experiments have also shown the influence of heat sinks on the geometries of the deposits from EMBD. By modulating the relative position between the deposit and the heat sinks, it becomes possible to reshape the deposits. As a general-purposed nanofabrication process, EMBD will enable a variety of applications such as nanorobotic arc welding and assembly, nanoelectrodes direct writing, and nanoscale metallurgy.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124371891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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