2010 IEEE Nanotechnology Materials and Devices Conference最新文献

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Biological specimen viability analysis by hybrid microscope combined optical microscope and Environmental-SEM 光学显微镜与环境扫描电镜相结合的混合显微镜分析生物标本活力
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652121
M. Nakajima, H. Akimoto, T. Hirano, M. Kojima, N. Hisamoto, M. Homma, T. Fukuda
{"title":"Biological specimen viability analysis by hybrid microscope combined optical microscope and Environmental-SEM","authors":"M. Nakajima, H. Akimoto, T. Hirano, M. Kojima, N. Hisamoto, M. Homma, T. Fukuda","doi":"10.1109/NMDC.2010.5652121","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652121","url":null,"abstract":"This paper presents a novel biological specimen analysis system by hybrid microscope, which is combined optical and environmental-scanning electron microscope (E-SEM) based on nanorobotic manipulation system. As previous works, we present single cell analysis by E-SEM nanorobotic manipulation system. It can be realized that the nano-scale manipulation and evaluation by nano-tools using the nano-scale image of E-SEM. The E-SEM provides us the high resolution image of specimen with water containing condition by specially built detector and temperature controlling stage. However the E-SEM image, especially SEM image, is surface image, hence it is impossible to obtain the inner structural imaging which is important for biological analysis. In this work, we combine optical microscope (OM) and E-SEM to realize biological specimen analysis by optical microscope image including fluorescent imaging, and nano-scale manipulation by E-SEM imaging. We observe C. elegans as biological specimen analysis, because it is one of important model organism for various diseases analysis. The viability analysis has been done from the eGFP fluorescent intensity of C. elegans under E-SEM observation and electron beam irradiation. This system will be applied as future nano-surgery system based on nanomanipulation system for biological specimen.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114742248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Reliability properties in sub-50nm high performance high-k/metal gate stacks SiGe pMOSFETs 亚50nm高性能高k/金属栅极堆叠SiGe pmosfet的可靠性特性
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5651918
Min-Sang Park, C. Kang, D. Choi, C. Sohn, E. Jeong, Jinyong Chung, Jeong-Soo Lee, Y. Jeong
{"title":"Reliability properties in sub-50nm high performance high-k/metal gate stacks SiGe pMOSFETs","authors":"Min-Sang Park, C. Kang, D. Choi, C. Sohn, E. Jeong, Jinyong Chung, Jeong-Soo Lee, Y. Jeong","doi":"10.1109/NMDC.2010.5651918","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651918","url":null,"abstract":"We present the reliabilities in compressively strained SiGe channel pMOSFETs. A Si capping layer in SiGe channel pMOSFETs improved the negative bias temperature instability (NBTI) without device performance degradation. Also, the Si capped device exhibits the better NBTI reliability than the Si channel device. Because a Si capped structure forms the double barrier layer in the interface, it is the primary cause of improved NBTI. These results show that a Si capping layer should be used in SiGe channel pMOSFETs for better reliabilities and performance.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122730107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene based NO2 gas sensor 基于石墨烯的NO2气体传感器
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5649598
Sukju Hwang, Joon Hyong Cho, Juwhan Lim, W. Kim, Hyun-Jin Shin, J. Choi, J. H. Choi, Sang Yoon Lee, J. M. Kim, J. H. Kim, Seok Lee, S. Jun
{"title":"Graphene based NO2 gas sensor","authors":"Sukju Hwang, Joon Hyong Cho, Juwhan Lim, W. Kim, Hyun-Jin Shin, J. Choi, J. H. Choi, Sang Yoon Lee, J. M. Kim, J. H. Kim, Seok Lee, S. Jun","doi":"10.1109/NMDC.2010.5649598","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5649598","url":null,"abstract":"Graphene is a two-dimensional monolayer comprised of carbon atoms. By its unique intrinsic properties, graphene has many advantages for gas sensing. In this paper, we find results of the gas sensing performance using uniform single crystal structure graphene by mechanical exfoliation method measured under room temperature, atmospheric pressure. Also, we discuss the effects of various thermal treatments on the graphene at atmospheric pressure. The sensitivity increases and recovery time decreases as measurement temperature increases.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131089711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
3D Simulation of transient current and charge collection induced by heavy ion in SOI transistors SOI晶体管中重离子诱导瞬态电流和电荷收集的三维模拟
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652561
Xiaochen Zhang, S. Yue, Liang Wang
{"title":"3D Simulation of transient current and charge collection induced by heavy ion in SOI transistors","authors":"Xiaochen Zhang, S. Yue, Liang Wang","doi":"10.1109/NMDC.2010.5652561","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652561","url":null,"abstract":"The 3D simulation result shows how the heavy ion strike location, the structure (with or without body contact) of the device, and the energy of strike ion affect the parasitic bipolar gain. Short distance between strike location and body contact reduces the charge collection by drain more obviously than that in the case of longer distance. The highlight of the paper lies in the discovery and analysis of charge collection amplification absence in the device with body contact. Although no bipolar amplification is observed macroscopically, there is still parasitic bipolar element turned on for a short time. The short duration of the electron injection from source and the electron collection of the source reduce the charge collection of drain.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115118689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A second order approximation for the quasistatic properties of a nanoegg 纳米蛋准静态性质的二阶近似
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-10-01 DOI: 10.1109/NMDC.2010.5652404
S. Smaili, Y. Massoud
{"title":"A second order approximation for the quasistatic properties of a nanoegg","authors":"S. Smaili, Y. Massoud","doi":"10.1109/NMDC.2010.5652404","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652404","url":null,"abstract":"Breaking the symmetry in plasmonic nanoparticles offers additional degrees of freedom that can be utilized to increase the tunability of such nanoparticles. Metallic shells with non-concentric dielectric cores possess such properties, where the core displacement affects the wavelength at which plasmon resonance occurs. It remains important to have analytical formulation for the properties of such nanoparticles especially for the design and optimization for nanoparticle based devices. In this paper we present an analytical formulation for capturing the resonant properties of asymmetrical nanoparticles based on the quasistatic approximation of Maxwell's equations.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132139448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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