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Impact of bandgap and effective mass on the transport characteristics of tunneling FET 带隙和有效质量对隧道场效应管输运特性的影响
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652456
Ahmad Zubair, Saima A. Siddiqui, O. Shoron, Q. Khosru
{"title":"Impact of bandgap and effective mass on the transport characteristics of tunneling FET","authors":"Ahmad Zubair, Saima A. Siddiqui, O. Shoron, Q. Khosru","doi":"10.1109/NMDC.2010.5652456","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652456","url":null,"abstract":"Temperature and length scaling dependence of double gate tunnel FET has been analyzed considering the electric field of junction depletion region. In the ballistic limit Id has been found to be dominated by effective mass and insulator dielectric constant rather than bandgap. Hence, GaAs channel TFET has identified as higher current device than Si counterpart due to lower effective mass. However, off state leakage current has shown comparatively more temperature dependence than on current in GaAs TFET. Besides, transconductance has found to be positively dependent on temperature for this device.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115688317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Decoration of particles by thin tantalum films 用钽薄膜对颗粒进行装饰
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652187
V. Pandit, W. Prater, N. Tran, P. Kothnur
{"title":"Decoration of particles by thin tantalum films","authors":"V. Pandit, W. Prater, N. Tran, P. Kothnur","doi":"10.1109/NMDC.2010.5652187","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652187","url":null,"abstract":"Surface particle defects smaller than the minimum detection limit (MDL) of particle detection metrology, may, after a thin-film deposition step, get decorated and become larger than the MDL. Chip manufacturers may therefore incorrectly identify the thin-film deposition step as the defect creation step and allocate resources incorrectly. The effect of thin film deposition on pre-existing poly-styrene latex (PSL) spheres on the wafer surface was studied. Results show that both the physical size and scattering cross section of the spheres increased after thin film deposition. For a film thickness of 128 nm, the increase in size of the PSL spheres was found to be about 60–80 nm depending on original particle size. Experimental results are in good agreement with feature scale simulations. Shadowing at the interface of large PSL spheres and the wafer surface was predicted by simulations and confirmed by experimental observations.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125350196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomistic modeling of unintentional single charge effects in silicon nanowire FETs 硅纳米线场效应管中非故意单电荷效应的原子模型
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652451
Ramya Hindupur, S. Islam, S. Ahmed
{"title":"Atomistic modeling of unintentional single charge effects in silicon nanowire FETs","authors":"Ramya Hindupur, S. Islam, S. Ahmed","doi":"10.1109/NMDC.2010.5652451","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652451","url":null,"abstract":"Numerical simulations have been performed to study single-charge-induced ON-current fluctuations (random telegraphic noise) in silicon nanowire field-effect transistors. A 3-D fully atomistic quantum-corrected particle-based Monte Carlo device simulator (MCDS 3-D) has been integrated and used in this work. Our study confirms that the presence of single channel charges modifies the electrostatics (carrier density) and dynamics (carrier mobility) of the device, both of which play important roles in determining the magnitude of the current fluctuations. The relative impact (percentage change in the ON-current) depends on an intricate interplay of device size, geometry, channel (crystal) orientation, gate bias, and energetics and spatial location of the charge.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115537077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High risk of underestimation of internal eye pressure for elderly people 老年人低估内眼压的风险高
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5651864
M. Kaneko, Y. Kiuchi
{"title":"High risk of underestimation of internal eye pressure for elderly people","authors":"M. Kaneko, Y. Kiuchi","doi":"10.1109/NMDC.2010.5651864","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651864","url":null,"abstract":"Measurement of Internal eye pressure (IOP) is a good starting point for examining whether your eyes are suffered by glaucoma or not. An issue of IOP measurement is that we are obliged to evaluate it under that the equivalent pressure coming from cornea stiffness is unknown. Therefore, the IOP measurement depends upon the structural stiffness of cornea. The goal of this work is to examine how the structural stiffness of cornea changes with respect to age by focusing on cornea curvature. Our experimental results show that the structural stiffness becomes more compliant especially in elderly people than that in young people, and as a result the current IOP measurement is a high risk of underestimation especially for elderly people.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129645276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Designing current mirror with Nano wire FET 纳米线场效应管电流反射镜的设计
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652336
E. Mazidi
{"title":"Designing current mirror with Nano wire FET","authors":"E. Mazidi","doi":"10.1109/NMDC.2010.5652336","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652336","url":null,"abstract":"As Nano technology develops more each day and Nano electronic devices come to realization it is obvious that the next step of development would be Nano circuits. Considering the technology difference between the usual 0.1 µm CMOS and Nano scale transistors it is mandatory to fabricate the whole IC with Nano technology circuits. The need for a current source in almost all of the integrated circuits and the common usage of current mirror creates the necessity to design one with Nano technology. Therefore what we have presented in this paper is the design of a current mirror circuit, which uses Nano transistors instead of the usual CMOS transistors. There are two main types of Nano transistors at present, Nano wire transistors and carbon Nano tube transistors; Nano wire transistors will provide a higher output current than carbon Nano tube transistors and better output impedance; which is why we have chosen Nano wire transistors (NWT) for our purposes. The current mirror we used here is an accurate current mirror source suitable for mixed signal IC applications for its stability and high output impedance.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130286895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low frequency drain current flicker noise model for pocket implanted nano scale n-MOSFET 口袋植入纳米n-MOSFET的低频漏极电流闪变噪声模型
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652468
Prof. Dr. Engr. Muhibul Haque Bhuyan, Q. Khosru
{"title":"Low frequency drain current flicker noise model for pocket implanted nano scale n-MOSFET","authors":"Prof. Dr. Engr. Muhibul Haque Bhuyan, Q. Khosru","doi":"10.1109/NMDC.2010.5652468","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652468","url":null,"abstract":"This paper presents an analytical drain current flicker noise model for pocket implanted nano scale n-MOSFET. The model is developed by using two linear pocket profiles at the source and drain edges. Thus the channel is divided into three regions at source, drain and central part of the channel region. Then the number of channel charges are found for these three regions and are incorporated it in the unified flicker noise model developed by Hung et al. for the conventional metal oxide semiconductor field effect transistor. The simulation results show that the derived drain current flicker noise model has a simple compact form.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124223556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Nanostructured thermoelectric material and device technology for energy harvesting applications 用于能量收集的纳米结构热电材料和器件技术
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652061
C. Stokes, E. Duff, M. Mantini, B. A. Grant, R. Venkatasubramanian
{"title":"Nanostructured thermoelectric material and device technology for energy harvesting applications","authors":"C. Stokes, E. Duff, M. Mantini, B. A. Grant, R. Venkatasubramanian","doi":"10.1109/NMDC.2010.5652061","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652061","url":null,"abstract":"There is increasing need for self-sufficient power sources for wireless sensors and electronics that can extend device performance beyond what is available from conventional batteries. Thermoelectric approaches for developing such power sources using geothermal and body heat are attractive. RTI has developed a prototype “thermal ground stake” wireless sensor node powered by thermoelectric (TE) energy harvesting that lends itself to unattended ground sensors for covert military and security operations where TE powered sensors are concealed in the ground. In another application, RTI International and QUASAR are jointly developing an integrated body-worn biosensor system powered by body heat thermoelectric energy harvesting.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132374719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Modeling thermal conductivity and CTE for CNT-Cu composites for 3-D TSV application 三维TSV应用CNT-Cu复合材料的热导率和CTE建模
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652157
Arpita Sinha, Jadran A. Mihailovic, J. Morris, Hua Lu, C. Bailey
{"title":"Modeling thermal conductivity and CTE for CNT-Cu composites for 3-D TSV application","authors":"Arpita Sinha, Jadran A. Mihailovic, J. Morris, Hua Lu, C. Bailey","doi":"10.1109/NMDC.2010.5652157","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652157","url":null,"abstract":"The goal of this research is to develop a consistent and repeatable method to evaluate: a) effective thermal conductivity, and b) axial and transverse coefficients of thermal expansion (CTE) of SWCNT (single walled carbon nanotube)-Cu composites, with the view to potentially replacing Cu vias with CNT-Cu TSVs (through-silicon vias) in 3D electronics packaging. Finite element models were built using Abaqus® v. 6.9. CTE and thermal conductivity models encompassed different SWCNT and Cu interactions at the interface. The impact of changing the volume fraction as well as using filler metals or polymers other than Cu can easily be studied from the proposed models, as long as their bulk properties are known.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131622077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Electro-magnetic sensing and actuation array on silicon substrate platforms 基于硅衬底平台的电磁传感与驱动阵列
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5651978
F. Abu-Nimeh, F. Salem
{"title":"Electro-magnetic sensing and actuation array on silicon substrate platforms","authors":"F. Abu-Nimeh, F. Salem","doi":"10.1109/NMDC.2010.5651978","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651978","url":null,"abstract":"Electromagnetic arrays can be precisely constructed on silicon CMOS technology as a platform for collective non-contact sensing and manipulation of magnetic or magnetized particles of micron to nano scale. Such platforms become a tool to interact with nano scale particles on the silicon substrate and enable direct interface to measurement and computing devices. This paper overviews current efforts along this direction and presents an example design of a platform for sensing and manipulating magnetized beads on its surface using standard silicon CMOS technology. The vision is that such arrays can be easily commanded in nano seconds to realize magnetic field profiles in order to steer magnetized material in the proximity of the platform. Moreover, as technology features decrease, the size of the electromagnetic coil cells in the array would also decrease to nano scale, sharpening the sensing and manipulation resolution of the platforms.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117210976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Three dimensional modeling of SOI four gate transistors SOI四栅极晶体管的三维建模
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652434
S. Sayed, M. I. Hossain, Rezwanul Huq, M. Z. R. Khan
{"title":"Three dimensional modeling of SOI four gate transistors","authors":"S. Sayed, M. I. Hossain, Rezwanul Huq, M. Z. R. Khan","doi":"10.1109/NMDC.2010.5652434","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652434","url":null,"abstract":"A mathematical model is developed to determine the 3-D potential distribution of a fully-depleted silicon-on-insulator (SOI) four-gate transistor (G4-FET). The potential distributions along the channel and between the junction-gates are assumed to be parabolic due to short channel effect. Using these two assumptions, the 3-D potential distribution model is developed. From the 3-D model, expression for threshold voltage is derived considering all possible charge conditions at the back surface. The proposed models successfully correlate the effect of all four gates and consider the impact of channel length, drain voltage and other device dimensions.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127546370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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