发布求助
文献互助 智能选刊 最新文献

2010 IEEE Nanotechnology Materials and Devices Conference最新文献

筛选
英文 中文
Hydrothermal growth and field emission properties of ZnO nanotube arrays ZnO纳米管阵列的水热生长和场发射特性
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5649603
Li-An Map, T. Guo
{"title":"Hydrothermal growth and field emission properties of ZnO nanotube arrays","authors":"Li-An Map, T. Guo","doi":"10.1109/NMDC.2010.5649603","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5649603","url":null,"abstract":"Highly aligned ZnO nanotube array films on the conducting substrates have been synthesized by a simple hydrothermal method. The as-synthesized ZnO nanotubes have diameters of 300–400nm and lengths of 7μm (the aspect ratios of ~20). The field emission of ZnO nanotube array films shows a turn-on field of about 4.6V/μm at a current density of 1μA/cm and emission current density up to about 0.22mA/cm2 at a bias field of 8.25 V/μm. These result suggest that the relatively low the aspect ratios of the ZnO nanotue can posses strong field emission characteristics.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130881592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comprehensive optimization of an XY nano positioning stage with flexure-hinges and lever mechanisms 具有柔性铰链和杠杆机构的XY纳米定位平台的综合优化
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652301
Xiaohui Xiao, Lizhi Pan, Pinkuan Liu, Xuemei Tong, C. Yin
{"title":"Comprehensive optimization of an XY nano positioning stage with flexure-hinges and lever mechanisms","authors":"Xiaohui Xiao, Lizhi Pan, Pinkuan Liu, Xuemei Tong, C. Yin","doi":"10.1109/NMDC.2010.5652301","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652301","url":null,"abstract":"Concerning compliant micro-positioning stage adopting flexure hinges with lever magnifying mechanism, aiming at performance of as large motion space, little parasitic motion and high response bandwidth, a series measures for optimization design are proposed to balance the lever magnification ratio and parasitic motion coupling ratio, based on comparative analysis of eighty sets of design schemes. Then, those proposed optimization measures were implemented to design a compliant XY nano positioning stage. FEM analyses in ANSYS software were adopted to verify the minimum parasitic motion effects and guarantee the workspace, as while as static and dynamic performances of the stage. The magnifying ratios of the optimized stage in X and Y axis achieve 5.0580 and 5.1351 respectively, while parasitic motion ratio is decreased to 0.003. The 1st natural frequency of the manipulator is 582.01Hz, while its rise time of step response is less than 0.0005s.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130441888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanoscale welding of MWCNTs for nanodevice applications 用于纳米器件的MWCNTs纳米级焊接
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5649623
Haibo Yu, Z. Dong, W. Li
{"title":"Nanoscale welding of MWCNTs for nanodevice applications","authors":"Haibo Yu, Z. Dong, W. Li","doi":"10.1109/NMDC.2010.5649623","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5649623","url":null,"abstract":"This paper describes a process to perform nanoscale welding of multi-walled carbon nanotubes (MWCNTs) using a conductive atomic force microscopy (AFM) tip. An AFM tip can be used not only to apply a mechanical force to push, drag or scratch a sample, but also to exert an electrostatic force between the conductive tip and a sample substrate by applying a bias voltage. This electrostatic field will be extremely high, due to the phenomenon of local field enhancement. Such a high electric field will provide enough energy for the metal atoms to evaporate from the conductive tip. In this paper, a model is developed to simulate the electrostatic field by adjusting the distance and the bias voltage between the conductive tip and substrate. The simulation results show that the radius of the conductive tip, the bias voltage and the gap distance will all affect the electric field intensity. In our experiments, MWCNTs are first assembled between a pair of electrodes using a dielectrophoresis (DEP) technique. Then, an electrostatic field is applied to weld MWCNTs onto the surface of microelectrodes. The experimental results show that MWCNTs can effectively be welded and the electronics performance can also be greatly improved.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127820945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Understanding the impact of particle separation in a plasmonic dimer on the resonance wavelength 了解等离子二聚体中粒子分离对共振波长的影响
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652097
S. Smaili, Y. Massoud
{"title":"Understanding the impact of particle separation in a plasmonic dimer on the resonance wavelength","authors":"S. Smaili, Y. Massoud","doi":"10.1109/NMDC.2010.5652097","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652097","url":null,"abstract":"Plasmonic dimers consist of two nanopar-ticles in near vicinity of each other, which give the dimer unique properties that the single constituents do not have. Given the increased interest in these types of particles, establishing efficient modeling techniques for dimers becomes essential to be able to design systems with optimal performance. Moreover, modeling dimers is a key first step into modeling more complex systems of interacting nanoparticles where traditional simulation methods are highly inefficient. In this paper, we present an efficient modeling technique for dimers based on the quasistatic approximation. Our modeling technique can capture the resonance properties of dimers and our formulation of the quasistatic approximation problem is efficient to implement.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126795402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Development of Smart Security System 智能安防系统的开发
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5651846
Koosuke Hattori, R. Taguchi, T. Umezaki, M. Hayashi, T. Saigo, Susumu Shibata, M. Hoguro, Mikio Kuzuya
{"title":"Development of Smart Security System","authors":"Koosuke Hattori, R. Taguchi, T. Umezaki, M. Hayashi, T. Saigo, Susumu Shibata, M. Hoguro, Mikio Kuzuya","doi":"10.1109/NMDC.2010.5651846","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651846","url":null,"abstract":"We are developing an advanced safety life support system SSS (Smart Security System): The next generation security system which shares information of the individuals, the families, the friends and the neighbors by using IT. In this paper, we report the new sensing devices to obtain the various information that is one of the important factors in the operation of the security system. The contactless fingerprint and vein sensor, the intelligent detector of moving objects, the self-management security system on a Web and the 3D facial shape measurement system are introduced.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121037773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An equivalent circuit model for high-k/metal gate stack MOS capacitor with dynamic leakage 具有动态泄漏的高k/金属栅堆MOS电容等效电路模型
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5651924
C. Sohn, E. Jeong, H. Sagong, D. Choi, Min-Sang Park, C. Kang, Jinyong Chung, Y. Jeong
{"title":"An equivalent circuit model for high-k/metal gate stack MOS capacitor with dynamic leakage","authors":"C. Sohn, E. Jeong, H. Sagong, D. Choi, Min-Sang Park, C. Kang, Jinyong Chung, Y. Jeong","doi":"10.1109/NMDC.2010.5651924","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651924","url":null,"abstract":"This paper presents a simple equivalent circuit model to characterize a gate impedance of MOS capacitor with high-k dielectric, which exhibited significant dynamic leakage. Series of RC-shunts was added to consider the effects of charge trapping in high-k dielectric. From our model, it is found that two-frequency method using the megahertz range gives us reasonable values for the gate capacitance because the traps with large time constants are unable to response the modulating frequency. Also, parameters for our model are systematically analyzed.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122535999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and analysis of photonic crystal for performance enhancement of carbon nanotube based infrared sensors 提高碳纳米管红外传感器性能的光子晶体设计与分析
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652235
Jianyong Lou, N. Xi, C. Fung, K. Lai, Liangliang Chen, Hongzhi Chen
{"title":"Design and analysis of photonic crystal for performance enhancement of carbon nanotube based infrared sensors","authors":"Jianyong Lou, N. Xi, C. Fung, K. Lai, Liangliang Chen, Hongzhi Chen","doi":"10.1109/NMDC.2010.5652235","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652235","url":null,"abstract":"The photonic crystals of parylene and silicon dielectric media for infrared light localization are analyzed in this paper. The Bloch's theorem is adopted to calculate the infrared light transmission in two-dimensional photonic crystal. First, the band gap diagrams for photonic crystal of parylene and silicon are calculated and compared respectively. It is revealed that the photonic crystal of parylene rods in air has a bigger band gap for TM than that for TE mode. In the photonic crystal of air hole in dielectric slab, the stop band width for TE mode is bigger than that for TM wave, and the band gap of silicon photonic crystal is more obvious than that of parylene slab. The energy distribution and boundary condition of electrical field in the interface of dielectric media are considered to be responsible for the reason of the band gap differences for TE and TM wave. Second, the band gap vs. air hole radius of parylene and silicon photonic crystal is obtained, which shows the relationship of stop band width vs. air hole radius. Third, the infrared light localization in point defect is found, and the electrical field profiles for both parylene and silicon photonic crystals are shown. The central point defect in photonic crystal acts as a resonant cavity to confine infrared light and reach high photon density. Finally, the energy confinement efficiency vs. lattice arrangement of photonic crystal is calculated, which can be useful for photonic crystal design and fabrication.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128063989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon nanowire fabrication using edge and corner lithography 硅纳米线的边角光刻技术
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652181
H. Yagubizade, E. Berenschot, H. Jansen, M. Elwenspoek, N. Tas
{"title":"Silicon nanowire fabrication using edge and corner lithography","authors":"H. Yagubizade, E. Berenschot, H. Jansen, M. Elwenspoek, N. Tas","doi":"10.1109/NMDC.2010.5652181","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652181","url":null,"abstract":"This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features to the formed. The pattern formed by conventional microlithography determines the location. The presented method is based on the low etch rate of <111>-planes. Initially, using edge lithography, nanoridges with ∼71° angle with the wafer surface and bound by <111>-planes are fabricated. Thereafter, corner lithography is used. The fabricated SiNWs can be isolated from the substrate by oxidation of the thin silicon base.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134153249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Fabrication of graphene devices for infrared detection 用于红外探测的石墨烯器件的制备
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652175
K. Lai, C. Fung, Hongzhi Chen, Ruiguo Yang, Bo Song, N. Xi
{"title":"Fabrication of graphene devices for infrared detection","authors":"K. Lai, C. Fung, Hongzhi Chen, Ruiguo Yang, Bo Song, N. Xi","doi":"10.1109/NMDC.2010.5652175","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652175","url":null,"abstract":"Researchers have been looking for novel materials to improve the performance of photonic devices. Graphene has great potential to optoelectronic applications because of its excellent optical properties. Here, we demonstrate using the graphene-based photodetectors for infrared detection under a zero-bias operation. We have demonstrated to use an electric-field-assisted method to manipulate graphene flake between metal microelectrodes successfully without the electron beam lithography. The devices are made from few-layer-graphene and multi-layer-graphene which are confirmed by Raman spectroscopy and atomic force microscopy. The size of the graphene flake can be as large as 15 μm × 15 μm. The obtained results demonstrate high potential applications of the electric-field-assisted technique and nano assembly to fabricate graphene-based infrared photodetectors.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125718977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An analysis on applicability of Ti-doped ZnO films as the channel layer of TFTs ti掺杂ZnO薄膜作为tft沟道层的适用性分析
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652115
K. Jeong, Young-Su Kim, Yu-Mi Kim, J. Park, Seung-Dong Yang, H. Yun, H. Lee, Ga-Won Lee
{"title":"An analysis on applicability of Ti-doped ZnO films as the channel layer of TFTs","authors":"K. Jeong, Young-Su Kim, Yu-Mi Kim, J. Park, Seung-Dong Yang, H. Yun, H. Lee, Ga-Won Lee","doi":"10.1109/NMDC.2010.5652115","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652115","url":null,"abstract":"In this paper, Ti-doped ZnO TFTs on SiO2/Si substrates by simultaneous RF sputter of Zn and DC magnetron sputter of Ti are successfully fabricated. With undoped ZnO TFTs, as-grown Ti-doped ZnO are compared with post-annealed Ti-doped ZnO TFTs in the furnace at O2 atmosphere of 300 °C. As the annealing time increases, the electrical characteristics such as sub-threshold slop (SS) and on/off current ratio of Ti-doped ZnO TFT become better. In order to find out the reason of performance improvement, the optical analysis is carried out. The data of XRD and AFM indicate that grain size and RMS (root mean square) roughness increase in accordance with annealing time, and the potential barrier and work function of Ti-doped ZnO is smaller than that of undoped ZnO, which indicates that the performance improvement by post-annealing in O2 atmosphere is due to a crystalline reformation in Ti-doped ZnO films.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"420 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116402094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信