An equivalent circuit model for high-k/metal gate stack MOS capacitor with dynamic leakage

Abstract

This paper presents a simple equivalent circuit model to characterize a gate impedance of MOS capacitor with high-k dielectric, which exhibited significant dynamic leakage. Series of RC-shunts was added to consider the effects of charge trapping in high-k dielectric. From our model, it is found that two-frequency method using the megahertz range gives us reasonable values for the gate capacitance because the traps with large time constants are unable to response the modulating frequency. Also, parameters for our model are systematically analyzed.