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Characterization of interface trap density of In-rich InGaAs nMOSFETs with ALD Al2O3 as gate dielectric 以Al2O3为栅极介质的富in InGaAs nmosfet界面阱密度表征
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652388
Saima Sharmin, U. Sikder, R. ul-ferdous, Q. Khosru
{"title":"Characterization of interface trap density of In-rich InGaAs nMOSFETs with ALD Al2O3 as gate dielectric","authors":"Saima Sharmin, U. Sikder, R. ul-ferdous, Q. Khosru","doi":"10.1109/NMDC.2010.5652388","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652388","url":null,"abstract":"In this paper, we characterize the interface properties of In-rich In<inf>0.65</inf>Ga<inf>0.35</inf>As and In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs with ALD Al<inf>2</inf>O<inf>3</inf> gate dielectric. Interface trap density is extracted from physically based quantum mechanical low frequency CV model. We show that donor-like traps dominate the D<inf>it</inf> profile for In<inf>0.75</inf>Ga<inf>0.25</inf>As-channel compared to In<inf>0.65</inf>Ga<inf>0.35</inf>As-channel MOSFETs. This result explains the reason of stronger inversion of In-rich surface channel MOSFETs and hence, better transport characteristics in spite of high interface trap density.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"909 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116402591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Resistive switching characteristics of novel Al-inserted resistive random access memory (RRAM) 新型al插入式阻性随机存取存储器(RRAM)的电阻开关特性
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652485
K. Ryoo, Jeong-Hoon Oh, Sunghun Jung, Byung-Gook Park
{"title":"Resistive switching characteristics of novel Al-inserted resistive random access memory (RRAM)","authors":"K. Ryoo, Jeong-Hoon Oh, Sunghun Jung, Byung-Gook Park","doi":"10.1109/NMDC.2010.5652485","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652485","url":null,"abstract":"Resistive switching characteristics are investigated for aluminum (Al) inserted NiO resistive switching random access memory (RRAM) by adapting cross-pointed structure. In order to evaluate high-density RRAM with low switching current, we have shown the relationships between various important analytical parameters and reset current reduction. We examine the optimal NiO oxygen content and Al insertion prove the mechanism which reduces reset current. It is observed that the reset current was greatly reduced down to 0.15mA using proposed Al-inserted NiO cell structure that successfully contributes to reset process.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126708269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of measurement for Dynamic Visual Acuity (DVA) in virtual environment 虚拟环境中动态视力（DVA）测量的效果
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5651882
Daisuke Isayama, R. Taguchi, T. Umezaki, M. Hoguro
{"title":"Effects of measurement for Dynamic Visual Acuity (DVA) in virtual environment","authors":"Daisuke Isayama, R. Taguchi, T. Umezaki, M. Hoguro","doi":"10.1109/NMDC.2010.5651882","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651882","url":null,"abstract":"Recently, dynamic vision measurement and improvement in the virtual environment on the display and the monitor become widely known for the public. It is possible to measure and train easily in the virtual environment. However, the situation that a target moves discretely in the virtual environment and the situation that a target moves continuously in the real environment have a difference in vision. In this paper, we examine a difference of target's vision both in a virtual environment and in a real environment, and developed DVA measuring instrument that can measure similarly condition in both environments. The dynamic vision for various ages is measured, and we evaluate the correlation in the both environments.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131079039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Built-in electric fields in InAs/GaAs quantum dots: Geometry dependence and effects on the electronic structure InAs/GaAs量子点内建电场:几何依赖性及对电子结构的影响
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652313
S. Sundaresan, S. Islam, S. Ahmed
{"title":"Built-in electric fields in InAs/GaAs quantum dots: Geometry dependence and effects on the electronic structure","authors":"S. Sundaresan, S. Islam, S. Ahmed","doi":"10.1109/NMDC.2010.5652313","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652313","url":null,"abstract":"Built-in electrostatic fields in zincblende quantum dots originate mainly from-(1) the fundamental crystal atomicity and the interfaces between two dissimilar materials, (2) the atomistic strain relaxation, and (3) the piezoelectric polarization. In this paper, using the atomistic NEMO 3-D simulator, we study the origin and nature of various internal fields in InAs/GaAs quantum dots having three different geometries, namely, box, dome, and pyramid. We then calculate and delineate the impact of the internal fields on the one-particle electronic states in terms of shift in the conduction band energy states, anisotropy and twofold degeneracy in the P level, and formation of mixed excited bound states. A list of models and approaches used in this study is as follows: (1) Valence force field (VFF) with strain-dependent Keating potentials for atomistic strain relaxation; (2) 20-band nearest-neighbor sp3 d5 s∗ tight-binding model for the calculation of single-particle energy states; and (3) For piezoelectricity, for the first time within the framework of sp3 d5 s∗ tight-binding theory, four different recently-proposed polarization models (linear and non-linear) have been considered in this study. In contrast to recent studies of similar quantum dots, our calculations yield a non-vanishing net piezoelectric contribution to the built-in electrostatic field. We also demonstrate the importance of full three-dimensional (3-D) atomistic material representation and the need for using realistically-extended substrate and cap layers (systems containing millions of atoms) in the numerical modeling of these reduced-dimensional quantum dots.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132929378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The effects of vacancies on the transport properties of zigzag graphene nanoribbons 空位对之字形石墨烯纳米带输运性质的影响
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5649618
Yu Zhang, Lianqing Liu, N. Jiao, N. Xi, Yuechao Wang, Z. Dong
{"title":"The effects of vacancies on the transport properties of zigzag graphene nanoribbons","authors":"Yu Zhang, Lianqing Liu, N. Jiao, N. Xi, Yuechao Wang, Z. Dong","doi":"10.1109/NMDC.2010.5649618","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5649618","url":null,"abstract":"The transport properties of zigzag graphene nanoribbons (ZGNRs) with different patterns of vacancies are investigated by using density functional theory and nonequilibrium Green's function (NEGF) formalism. It is found that the transport properties are different with a different lattice type vacancy (A-type or B-type vacancy). The conductance of ZGNRs is more sensitive to an interior vacancy than an edge vacancy. More importantly, the pattern of interior vacancies has enormous influence on the electron transport around the Femi energy. As hexagon carbons are removed, the ZGNRs transform from metallic to semiconducting. Thus one can tune the electron properties of ZGNRs by patterning vacancies.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122667138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Measuring the physical properties of the lymphoma cells using atomic force microscopy 用原子力显微镜测量淋巴瘤细胞的物理性质
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652223
Mi Li, Lianqing Liu, N. Xi, Yuechao Wang, Z. Dong, Guangyong Li, Xiubin Xiao, Weijing Zhang
{"title":"Measuring the physical properties of the lymphoma cells using atomic force microscopy","authors":"Mi Li, Lianqing Liu, N. Xi, Yuechao Wang, Z. Dong, Guangyong Li, Xiubin Xiao, Weijing Zhang","doi":"10.1109/NMDC.2010.5652223","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652223","url":null,"abstract":"Illuminating the underlying mechanism of drug action at single-cell and single-molecule levels is of great significance for the personalized treatment of diseases. In this paper, with the use of the atomic force microscopy (AFM), the mechanical property of the lymphoma cells was quantitatively measured and the CD20-Rituximab binding force was measured on the surface of the lymphoma cells by linking the Rituximab molecules onto the AFM tip. The results lay the foundation for the further study of the molecular mechanism of Rituximab anti-cancer effect.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122886510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of large-area PDMS triangle nanopillar arrays 大面积PDMS三角形纳米柱阵列的制备
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652205
Xianzhong Chen, K. Jiang
{"title":"Fabrication of large-area PDMS triangle nanopillar arrays","authors":"Xianzhong Chen, K. Jiang","doi":"10.1109/NMDC.2010.5652205","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652205","url":null,"abstract":"This paper presents an approach for fabricating periodic triangle nanopillar arrays by a combination of bilayer self-assembly, oxygen etching and poly (dimethylsiloxane) (PDMS) moulding. A bilayer of polystyrene (PS) nanospheres is used on a substrate as a template for replicating the PDMS nanostructure. The gaps in nanoscale is tuned by reducing the diameter of the top layer nanospheres using oxygen etching. Good uniformity is observed in the triangle structures. The feature size of the triangle structures can be tuned by controlling the etching time. The simplicity and low cost of this approach may make widespread applications of these PDMS nanopatterns.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124536336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Scalable embedded Ge-junction vertical-channel tunneling field-effect transistor for low-voltage operation 用于低压工作的可扩展嵌入式ge结垂直沟道隧道场效应晶体管
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652410
Min-Chul Sun, Sang Wan Kim, Garam Kim, H. Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park
{"title":"Scalable embedded Ge-junction vertical-channel tunneling field-effect transistor for low-voltage operation","authors":"Min-Chul Sun, Sang Wan Kim, Garam Kim, H. Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park","doi":"10.1109/NMDC.2010.5652410","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652410","url":null,"abstract":"While a tunneling field-effect transistor (TFET) is an attractive candidate for sub-20 nm ultra-low-power device, high ION/IOFF and on-current are rarely reported with the deep-submicron structures. In this study, we propose a practical novel TFET structure with vertical channel and Ge junction, which shows high current ratio, low subthreshold swing and relatively high current even when the minimum device dimension is smaller than 20 nm. To find the optimum design, the off-state injection of a short-channel TFET and optimization of the source-side junction are studied by simulation.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127623076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Effect of UV irradiation on gas sensing behavior of nanocrystalline ZnO thin films 紫外辐照对ZnO纳米晶薄膜气敏行为的影响
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652439
A. Soleimanpour, A. Jayatissa
{"title":"Effect of UV irradiation on gas sensing behavior of nanocrystalline ZnO thin films","authors":"A. Soleimanpour, A. Jayatissa","doi":"10.1109/NMDC.2010.5652439","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652439","url":null,"abstract":"The effect of UV irradiation on ZnO thin film based gas sensor was investigated. Zinc oxide thin films were deposited on an alkali free glass substrate by magnetron sputtering system using zinc target. The UV irradiation of the ZnO thin films was measured to understand the change of microstructure, electrical properties, optical properties and gas sensing characteristics. The X-ray diffraction patterns and SEM images revealed that the films have a nanocrystalline structure. The optical properties of ZnO films were not affected by the UV irradiation significantly. The gas sensing behavior of zinc oxide thin films were enhanced by UV irradiation for a shorter period whereas sensing characteristics were degraded for a longer irradiation period. It was also observed that the dependence of gas sensing characteristics was correlated with the change of electrical properties and crystallinity of films.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128669861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Investigation on optimizing the performance of conductance-based CNTs chemical sensors 电导型碳纳米管化学传感器性能优化研究
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5651960
M. Ouyang, Yu Zhang, W. Li
{"title":"Investigation on optimizing the performance of conductance-based CNTs chemical sensors","authors":"M. Ouyang, Yu Zhang, W. Li","doi":"10.1109/NMDC.2010.5651960","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651960","url":null,"abstract":"Signal-to-Noise Ratio (SNR) is a very essential parameter in determining a sensor's performance and ultimate resolution limit. For conductance-based CNTs chemical sensors, how to increase the response and suppress the noise is a critical issue in optimizing the sensor performance. In this paper, we discuss our experiments performed on conductance-based CNTs sensors, which were fabricated by DEP manipulation, to determine their response while using various activating current (e.g., 50nA–250µA), as well as under different ambient temperatures. The I-V characteristics, Temperature Coefficient of Resistance (TCR), and sensor response were discussed in detail. Also, we studied the relationship between SNR and activating current using different parameters, such as ambient temperature, various types of CNTs, as well as different CNTs sensor substrates.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117058446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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