Saima Sharmin, U. Sikder, R. ul-ferdous, Q. Khosru
{"title":"以Al2O3为栅极介质的富in InGaAs nmosfet界面阱密度表征","authors":"Saima Sharmin, U. Sikder, R. ul-ferdous, Q. Khosru","doi":"10.1109/NMDC.2010.5652388","DOIUrl":null,"url":null,"abstract":"In this paper, we characterize the interface properties of In-rich In<inf>0.65</inf>Ga<inf>0.35</inf>As and In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs with ALD Al<inf>2</inf>O<inf>3</inf> gate dielectric. Interface trap density is extracted from physically based quantum mechanical low frequency CV model. We show that donor-like traps dominate the D<inf>it</inf> profile for In<inf>0.75</inf>Ga<inf>0.25</inf>As-channel compared to In<inf>0.65</inf>Ga<inf>0.35</inf>As-channel MOSFETs. This result explains the reason of stronger inversion of In-rich surface channel MOSFETs and hence, better transport characteristics in spite of high interface trap density.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"909 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Characterization of interface trap density of In-rich InGaAs nMOSFETs with ALD Al2O3 as gate dielectric\",\"authors\":\"Saima Sharmin, U. Sikder, R. ul-ferdous, Q. Khosru\",\"doi\":\"10.1109/NMDC.2010.5652388\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we characterize the interface properties of In-rich In<inf>0.65</inf>Ga<inf>0.35</inf>As and In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs with ALD Al<inf>2</inf>O<inf>3</inf> gate dielectric. Interface trap density is extracted from physically based quantum mechanical low frequency CV model. We show that donor-like traps dominate the D<inf>it</inf> profile for In<inf>0.75</inf>Ga<inf>0.25</inf>As-channel compared to In<inf>0.65</inf>Ga<inf>0.35</inf>As-channel MOSFETs. This result explains the reason of stronger inversion of In-rich surface channel MOSFETs and hence, better transport characteristics in spite of high interface trap density.\",\"PeriodicalId\":423557,\"journal\":{\"name\":\"2010 IEEE Nanotechnology Materials and Devices Conference\",\"volume\":\"909 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Nanotechnology Materials and Devices Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NMDC.2010.5652388\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Nanotechnology Materials and Devices Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2010.5652388","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of interface trap density of In-rich InGaAs nMOSFETs with ALD Al2O3 as gate dielectric
In this paper, we characterize the interface properties of In-rich In0.65Ga0.35As and In0.75Ga0.25As MOSFETs with ALD Al2O3 gate dielectric. Interface trap density is extracted from physically based quantum mechanical low frequency CV model. We show that donor-like traps dominate the Dit profile for In0.75Ga0.25As-channel compared to In0.65Ga0.35As-channel MOSFETs. This result explains the reason of stronger inversion of In-rich surface channel MOSFETs and hence, better transport characteristics in spite of high interface trap density.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
