紫外辐照对ZnO纳米晶薄膜气敏行为的影响

A. Soleimanpour, A. Jayatissa
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引用次数: 7

摘要

研究了紫外辐射对ZnO薄膜气体传感器的影响。采用磁控溅射系统在无碱玻璃衬底上制备了氧化锌薄膜。通过紫外辐照测量ZnO薄膜的微观结构、电学性能、光学性能和气敏特性的变化。x射线衍射图和扫描电镜图像显示薄膜具有纳米晶结构。紫外辐照对ZnO薄膜的光学性能影响不大。短时间的紫外照射增强了氧化锌薄膜的气敏特性,而长时间的紫外照射则降低了其气敏特性。气敏特性的依赖性与薄膜的电学性质和结晶度的变化有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of UV irradiation on gas sensing behavior of nanocrystalline ZnO thin films
The effect of UV irradiation on ZnO thin film based gas sensor was investigated. Zinc oxide thin films were deposited on an alkali free glass substrate by magnetron sputtering system using zinc target. The UV irradiation of the ZnO thin films was measured to understand the change of microstructure, electrical properties, optical properties and gas sensing characteristics. The X-ray diffraction patterns and SEM images revealed that the films have a nanocrystalline structure. The optical properties of ZnO films were not affected by the UV irradiation significantly. The gas sensing behavior of zinc oxide thin films were enhanced by UV irradiation for a shorter period whereas sensing characteristics were degraded for a longer irradiation period. It was also observed that the dependence of gas sensing characteristics was correlated with the change of electrical properties and crystallinity of films.
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