Saima Sharmin, U. Sikder, R. ul-ferdous, Q. Khosru
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引用次数: 3
Abstract
In this paper, we characterize the interface properties of In-rich In0.65Ga0.35As and In0.75Ga0.25As MOSFETs with ALD Al2O3 gate dielectric. Interface trap density is extracted from physically based quantum mechanical low frequency CV model. We show that donor-like traps dominate the Dit profile for In0.75Ga0.25As-channel compared to In0.65Ga0.35As-channel MOSFETs. This result explains the reason of stronger inversion of In-rich surface channel MOSFETs and hence, better transport characteristics in spite of high interface trap density.
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