Impact of bandgap and effective mass on the transport characteristics of tunneling FET

Abstract

Temperature and length scaling dependence of double gate tunnel FET has been analyzed considering the electric field of junction depletion region. In the ballistic limit Id has been found to be dominated by effective mass and insulator dielectric constant rather than bandgap. Hence, GaAs channel TFET has identified as higher current device than Si counterpart due to lower effective mass. However, off state leakage current has shown comparatively more temperature dependence than on current in GaAs TFET. Besides, transconductance has found to be positively dependent on temperature for this device.