{"title":"衬底结晶度对InP纳米线生长和光学性能的影响","authors":"A. Lohn, N. Kobayashi","doi":"10.1109/NMDC.2010.5652543","DOIUrl":null,"url":null,"abstract":"Growth mechanisms and optical properties of indium phosphide nanowires were investigated on various material surfaces. InP nanowires were grown on three types of substrate surfaces; Si, GaAs and a hydrogenated silicon template layer prepared on a quartz substrate, by metalorganic chemical vapor deposition. The role of substrate in nanowire growth mechanisms and optical properties is addressed.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of substrate crystallinity on growth and optical properties of InP nanowires\",\"authors\":\"A. Lohn, N. Kobayashi\",\"doi\":\"10.1109/NMDC.2010.5652543\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Growth mechanisms and optical properties of indium phosphide nanowires were investigated on various material surfaces. InP nanowires were grown on three types of substrate surfaces; Si, GaAs and a hydrogenated silicon template layer prepared on a quartz substrate, by metalorganic chemical vapor deposition. The role of substrate in nanowire growth mechanisms and optical properties is addressed.\",\"PeriodicalId\":423557,\"journal\":{\"name\":\"2010 IEEE Nanotechnology Materials and Devices Conference\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Nanotechnology Materials and Devices Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NMDC.2010.5652543\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Nanotechnology Materials and Devices Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2010.5652543","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of substrate crystallinity on growth and optical properties of InP nanowires
Growth mechanisms and optical properties of indium phosphide nanowires were investigated on various material surfaces. InP nanowires were grown on three types of substrate surfaces; Si, GaAs and a hydrogenated silicon template layer prepared on a quartz substrate, by metalorganic chemical vapor deposition. The role of substrate in nanowire growth mechanisms and optical properties is addressed.
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