Modeling of switching response of small diameter nanowire field effect transistors

Abstract

We report on a comprehensive modeling of small diameter (< 4 nm) nanowire field effect transistors as switches. The SPICE simulation of the transistor takes data from device and material simulations, and therefore allows for significant flexibility in tool development for nano-devices and circuits. Device simulations involve solving self-consistently the drift-diffusion equation, with Gauss Law in integral form for the electrostatics of the device structure.